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Article: Crystallized Monolayer Semiconductor for Ohmic Contact Resistance, High Intrinsic Gain, and High Current Density

TitleCrystallized Monolayer Semiconductor for Ohmic Contact Resistance, High Intrinsic Gain, and High Current Density
Authors
PENG, BCao, KLAU, HYCHEN, MLu, YChan, KL
Issue Date2020
PublisherWiley-V C H Verlag GMBH. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089
Citation
Advanced Materials, 2020, v. 32 n. 34, p. 2002281 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.202002281
Persistent Identifierhttp://hdl.handle.net/10722/312734
ISI Accession Number ID
WOS:000548242000001

 

DC FieldValueLanguage
dc.contributor.authorPENG, B-
dc.contributor.authorCao, K-
dc.contributor.authorLAU, HY-
dc.contributor.authorCHEN, M-
dc.contributor.authorLu, Y-
dc.contributor.authorChan, KL-
dc.date.accessioned2022-05-12T10:54:50Z-
dc.date.available2022-05-12T10:54:50Z-
dc.date.issued2020-
dc.identifier.citationAdvanced Materials, 2020, v. 32 n. 34, p. 2002281-
dc.identifier.urihttp://hdl.handle.net/10722/312734-
dc.languageeng-
dc.publisherWiley-V C H Verlag GMBH. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089-
dc.relation.ispartofAdvanced Materials-
dc.titleCrystallized Monolayer Semiconductor for Ohmic Contact Resistance, High Intrinsic Gain, and High Current Density-
dc.typeArticle-
dc.identifier.emailChan, KL: pklc@hku.hk-
dc.identifier.authorityChan, KL=rp01532-
dc.identifier.doi10.1002/adma.202002281-
dc.identifier.hkuros332945-
dc.identifier.volume32-
dc.identifier.issue34-
dc.identifier.spage2002281-
dc.identifier.epage2002281-
dc.identifier.isiWOS:000548242000001-
dc.publisher.placeGermany-

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