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Article: Berry connection polarizability tensor and third-order Hall effect

TitleBerry connection polarizability tensor and third-order Hall effect
Authors
Issue Date2022
PublisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/
Citation
Physical Review B: covering condensed matter and materials physics, 2022, v. 105 n. 4, article no. 045118 How to Cite?
AbstractOne big achievement in modern condensed matter physics is the recognition of the importance of various band geometric quantities in physical effects. As prominent examples, Berry curvature and the Berry curvature dipole are connected to the linear and the second-order Hall effects, respectively. Here, we show that the Berry connection polarizability (BCP) tensor, as another intrinsic band geometric quantity, plays a key role in the third-order Hall effect. Based on the extended semiclassical formalism, we develop a theory for the third-order charge transport and derive explicit formulas for the third-order conductivity. Our theory is applied to the two-dimensional (2D) Dirac model to investigate the essential features of the BCP and the third-order Hall response. We further demonstrate the combination of our theory with the first-principles calculations to study a concrete material system, the monolayer FeSe. Our work establishes a foundation for the study of third-order transport effects, and reveals the third-order Hall effect as a tool for characterizing a large class of materials and for probing the BCP in band structure.
Persistent Identifierhttp://hdl.handle.net/10722/311218
ISSN
2023 Impact Factor: 3.2
2023 SCImago Journal Rankings: 1.345
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, H-
dc.contributor.authorZhao, J-
dc.contributor.authorHuang, Y-
dc.contributor.authorFeng, X-
dc.contributor.authorXiao, C-
dc.contributor.authorWu, W-
dc.contributor.authorLai, S-
dc.contributor.authorGao, W-
dc.contributor.authorYang, SA-
dc.date.accessioned2022-03-04T12:54:07Z-
dc.date.available2022-03-04T12:54:07Z-
dc.date.issued2022-
dc.identifier.citationPhysical Review B: covering condensed matter and materials physics, 2022, v. 105 n. 4, article no. 045118-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10722/311218-
dc.description.abstractOne big achievement in modern condensed matter physics is the recognition of the importance of various band geometric quantities in physical effects. As prominent examples, Berry curvature and the Berry curvature dipole are connected to the linear and the second-order Hall effects, respectively. Here, we show that the Berry connection polarizability (BCP) tensor, as another intrinsic band geometric quantity, plays a key role in the third-order Hall effect. Based on the extended semiclassical formalism, we develop a theory for the third-order charge transport and derive explicit formulas for the third-order conductivity. Our theory is applied to the two-dimensional (2D) Dirac model to investigate the essential features of the BCP and the third-order Hall response. We further demonstrate the combination of our theory with the first-principles calculations to study a concrete material system, the monolayer FeSe. Our work establishes a foundation for the study of third-order transport effects, and reveals the third-order Hall effect as a tool for characterizing a large class of materials and for probing the BCP in band structure.-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/-
dc.relation.ispartofPhysical Review B: covering condensed matter and materials physics-
dc.rightsCopyright 2022 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.105.045118.-
dc.titleBerry connection polarizability tensor and third-order Hall effect-
dc.typeArticle-
dc.identifier.emailXiao, C: congxiao@hku.hk-
dc.identifier.authorityXiao, C=rp02922-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.105.045118-
dc.identifier.scopuseid_2-s2.0-85123360592-
dc.identifier.hkuros332043-
dc.identifier.volume105-
dc.identifier.issue4-
dc.identifier.spagearticle no. 045118-
dc.identifier.epagearticle no. 045118-
dc.identifier.isiWOS:000752506000003-
dc.publisher.placeUnited States-

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