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Article: Effect of excess bismuth on the microstructures and electrical properties of strontium bismuth tantalate (SBT) thin films

TitleEffect of excess bismuth on the microstructures and electrical properties of strontium bismuth tantalate (SBT) thin films
Authors
Issue Date2000
Citation
Thin Solid Films, 2000, v. 375, n. 1-2, p. 215-219 How to Cite?
AbstractStrontium bismuth tantalate (SBT) films with excess Bi contents were prepared on Pt/TiO2/SiO2/Si substrates by a metallorganic decomposition technique. Effect of excess Bi contents on the microstructure and electrical properties were investigated. A predominant layered perovskite structure could be formed when an excess Bi less than 30% was added. For films above 30% excess of Bi, secondary phases occurred. The remnant polarization and dielectric constant decreased with excess Bi content. This was attributed to a smaller grain size and the presence of secondary phases. The leakage current characteristics were also examined. Space charge limited mechanism was observed in SBT films. In summary, 10% excess Bi was found to be the optimum composition with respect to grain size, morphology, and electrical properties.
Persistent Identifierhttp://hdl.handle.net/10722/310376
ISSN
2023 Impact Factor: 2.0
2023 SCImago Journal Rankings: 0.400
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Aidong-
dc.contributor.authorWu, Di-
dc.contributor.authorLing, Huiqin-
dc.contributor.authorYu, Tao-
dc.contributor.authorWang, Mu-
dc.contributor.authorYin, Xiaobo-
dc.contributor.authorLiu, Zhiguo-
dc.contributor.authorMing, Naiben-
dc.date.accessioned2022-01-31T06:04:43Z-
dc.date.available2022-01-31T06:04:43Z-
dc.date.issued2000-
dc.identifier.citationThin Solid Films, 2000, v. 375, n. 1-2, p. 215-219-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/10722/310376-
dc.description.abstractStrontium bismuth tantalate (SBT) films with excess Bi contents were prepared on Pt/TiO2/SiO2/Si substrates by a metallorganic decomposition technique. Effect of excess Bi contents on the microstructure and electrical properties were investigated. A predominant layered perovskite structure could be formed when an excess Bi less than 30% was added. For films above 30% excess of Bi, secondary phases occurred. The remnant polarization and dielectric constant decreased with excess Bi content. This was attributed to a smaller grain size and the presence of secondary phases. The leakage current characteristics were also examined. Space charge limited mechanism was observed in SBT films. In summary, 10% excess Bi was found to be the optimum composition with respect to grain size, morphology, and electrical properties.-
dc.languageeng-
dc.relation.ispartofThin Solid Films-
dc.titleEffect of excess bismuth on the microstructures and electrical properties of strontium bismuth tantalate (SBT) thin films-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0040-6090(00)01240-2-
dc.identifier.scopuseid_2-s2.0-0342538860-
dc.identifier.volume375-
dc.identifier.issue1-2-
dc.identifier.spage215-
dc.identifier.epage219-
dc.identifier.isiWOS:000165067400049-

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