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Article: AFM and HREM Observation of the Pulse Laser Interference Crystallized a—Si:H/a-SiNx:H Multilayers

TitleAFM and HREM Observation of the Pulse Laser Interference Crystallized a—Si:H/a-SiNx:H Multilayers
Authors
Wang, LiHuang, XinfanLi, JianXu, JunYin, XiaoboLi, QiliangLi, WeiZhu, JianmingWang, MuLiu, ZhiguoChen, KunjiFung, Y. M.Xu, J. B.
Issue Date2000
Citation
Materials Research Society Symposium - Proceedings, 2000, v. 609, p. A2511-A2516 How to Cite?
DOI: http://dx.doi.org/10.1557/proc-609-a25.1
AbstractThe patterned nc-Si/a-SiNx:H superlattices were fabricated by using laser interference crystallization method and investigated with atomic force microscope (AFM), micro-Raman spectroscope, cross-section transmission electron microscope (TEM) and high resolution electron microscope (HREM). We found that after laser irradiation, self-assembled Si nanocrystallites (nc-Si) are formed within the initial a-Si:H sublayers, moreover, in the plane parallel to the surface of the films, these nc-Si orderly distribute in the certain regions with the same periodicity of 2.0 μm as phase shifting mask grating. Based on the structural analyses, the crystallization mechanism and the origin of the self-assembled phenomena are briefly discussed. © 2000 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/310371
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114

 

DC FieldValueLanguage
dc.contributor.authorWang, Li-
dc.contributor.authorHuang, Xinfan-
dc.contributor.authorLi, Jian-
dc.contributor.authorXu, Jun-
dc.contributor.authorYin, Xiaobo-
dc.contributor.authorLi, Qiliang-
dc.contributor.authorLi, Wei-
dc.contributor.authorZhu, Jianming-
dc.contributor.authorWang, Mu-
dc.contributor.authorLiu, Zhiguo-
dc.contributor.authorChen, Kunji-
dc.contributor.authorFung, Y. M.-
dc.contributor.authorXu, J. B.-
dc.date.accessioned2022-01-31T06:04:43Z-
dc.date.available2022-01-31T06:04:43Z-
dc.date.issued2000-
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2000, v. 609, p. A2511-A2516-
dc.identifier.issn0272-9172-
dc.identifier.urihttp://hdl.handle.net/10722/310371-
dc.description.abstractThe patterned nc-Si/a-SiNx:H superlattices were fabricated by using laser interference crystallization method and investigated with atomic force microscope (AFM), micro-Raman spectroscope, cross-section transmission electron microscope (TEM) and high resolution electron microscope (HREM). We found that after laser irradiation, self-assembled Si nanocrystallites (nc-Si) are formed within the initial a-Si:H sublayers, moreover, in the plane parallel to the surface of the films, these nc-Si orderly distribute in the certain regions with the same periodicity of 2.0 μm as phase shifting mask grating. Based on the structural analyses, the crystallization mechanism and the origin of the self-assembled phenomena are briefly discussed. © 2000 Materials Research Society.-
dc.languageeng-
dc.relation.ispartofMaterials Research Society Symposium - Proceedings-
dc.titleAFM and HREM Observation of the Pulse Laser Interference Crystallized a—Si:H/a-SiNx:H Multilayers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1557/proc-609-a25.1-
dc.identifier.scopuseid_2-s2.0-0034429558-
dc.identifier.volume609-
dc.identifier.spageA2511-
dc.identifier.epageA2516-

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