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Article: Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates

TitleEpitaxial growth of TiO<inf>2</inf> thin films by pulsed laser deposition on GaAs(100) substrates
Authors
Liu, X.Chen, X. Y.Yin, J.Liu, Z. G.Liu, J. M.Yin, X. B.Chen, G. X.Wang, M.
Issue Date2001
Citation
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 2001, v. 19, n. 2, p. 391-393 How to Cite?
DOI: http://dx.doi.org/10.1116/1.1339017
AbstractRutile titanium dioxide films with preferred orientation were grown on semiconducting gallium arsenide substrates via pulsed laser deposition. The films were deposited at 700 degrees celsius under base vacuum. The films exhibited epitaxial properties. The surface morphology were observed using atomic force microscopy.
Persistent Identifierhttp://hdl.handle.net/10722/310352
ISSN
0734-2101
2023 Impact Factor: 2.4
2023 SCImago Journal Rankings: 0.569
ISI Accession Number ID
WOS:000167591600001

 

DC FieldValueLanguage
dc.contributor.authorLiu, X.-
dc.contributor.authorChen, X. Y.-
dc.contributor.authorYin, J.-
dc.contributor.authorLiu, Z. G.-
dc.contributor.authorLiu, J. M.-
dc.contributor.authorYin, X. B.-
dc.contributor.authorChen, G. X.-
dc.contributor.authorWang, M.-
dc.date.accessioned2022-01-31T06:04:40Z-
dc.date.available2022-01-31T06:04:40Z-
dc.date.issued2001-
dc.identifier.citationJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 2001, v. 19, n. 2, p. 391-393-
dc.identifier.issn0734-2101-
dc.identifier.urihttp://hdl.handle.net/10722/310352-
dc.description.abstractRutile titanium dioxide films with preferred orientation were grown on semiconducting gallium arsenide substrates via pulsed laser deposition. The films were deposited at 700 degrees celsius under base vacuum. The films exhibited epitaxial properties. The surface morphology were observed using atomic force microscopy.-
dc.languageeng-
dc.relation.ispartofJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films-
dc.titleEpitaxial growth of TiO<inf>2</inf> thin films by pulsed laser deposition on GaAs(100) substrates-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.1339017-
dc.identifier.scopuseid_2-s2.0-0035271904-
dc.identifier.volume19-
dc.identifier.issue2-
dc.identifier.spage391-
dc.identifier.epage393-
dc.identifier.isiWOS:000167591600001-

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