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- Publisher Website: 10.1063/5.0064466
- Scopus: eid_2-s2.0-85120077742
- WOS: WOS:000723288000006
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Article: Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells
Title | Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells |
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Authors | |
Issue Date | 2021 |
Publisher | AIP Publishing LLC. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2021, v. 130 n. 20, p. article no. 205704 How to Cite? |
Abstract | Large negative thermal quenching (NTQ) of the yellow luminescence (YL) for a temperature increase from 5 to 300 K is observed in non-polar InGaN/GaN quantum well (QW) samples due to the thermal migration of carriers from the InGaN QW layers to the GaN barrier layers for the first time. Such an unusual phenomenon happens only when the carriers are optically excited inside the QW layers, providing solid evidence for the occurrence of thermal transfer of photoexcited carriers from the QW layers to the GaN barrier layers. A simple model considering the thermal transfer of carriers is proposed to interpret the observed NTQ phenomenon. The thermal activation energy of the carriers is determined by fitting the reciprocal temperature dependence of the YL intensity in the Arrhenius plot with the model. |
Persistent Identifier | http://hdl.handle.net/10722/309032 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, X | - |
dc.contributor.author | Wang, T | - |
dc.contributor.author | Yu, D | - |
dc.contributor.author | Xu, S | - |
dc.date.accessioned | 2021-12-14T01:39:40Z | - |
dc.date.available | 2021-12-14T01:39:40Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Journal of Applied Physics, 2021, v. 130 n. 20, p. article no. 205704 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/309032 | - |
dc.description.abstract | Large negative thermal quenching (NTQ) of the yellow luminescence (YL) for a temperature increase from 5 to 300 K is observed in non-polar InGaN/GaN quantum well (QW) samples due to the thermal migration of carriers from the InGaN QW layers to the GaN barrier layers for the first time. Such an unusual phenomenon happens only when the carriers are optically excited inside the QW layers, providing solid evidence for the occurrence of thermal transfer of photoexcited carriers from the QW layers to the GaN barrier layers. A simple model considering the thermal transfer of carriers is proposed to interpret the observed NTQ phenomenon. The thermal activation energy of the carriers is determined by fitting the reciprocal temperature dependence of the YL intensity in the Arrhenius plot with the model. | - |
dc.language | eng | - |
dc.publisher | AIP Publishing LLC. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.title | Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells | - |
dc.type | Article | - |
dc.identifier.email | Wang, X: em118450@hku.hk | - |
dc.identifier.email | Xu, S: sjxu@hku.hk | - |
dc.identifier.authority | Xu, S=rp00821 | - |
dc.identifier.doi | 10.1063/5.0064466 | - |
dc.identifier.scopus | eid_2-s2.0-85120077742 | - |
dc.identifier.hkuros | 331002 | - |
dc.identifier.volume | 130 | - |
dc.identifier.issue | 20 | - |
dc.identifier.spage | article no. 205704 | - |
dc.identifier.epage | article no. 205704 | - |
dc.identifier.isi | WOS:000723288000006 | - |
dc.publisher.place | United States | - |