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Article: Bi2O2Se-Based Memristor-Aided Logic

TitleBi2O2Se-Based Memristor-Aided Logic
Authors
KeywordsBi2O2Se
RRAM
CAFM
kinetic Monte Carlo
MAGIC
Issue Date2021
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
ACS Applied Materials & Interfaces, 2021, v. 13 n. 13, p. 15391-15398 How to Cite?
AbstractThe implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.
Persistent Identifierhttp://hdl.handle.net/10722/305373
ISSN
2020 Impact Factor: 9.229
2020 SCImago Journal Rankings: 2.535
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, B-
dc.contributor.authorZhao, Y-
dc.contributor.authorVerma, D-
dc.contributor.authorWang, L-
dc.contributor.authorLiang, H-
dc.contributor.authorZhu, H-
dc.contributor.authorLi, LJ-
dc.contributor.authorHou, TH-
dc.contributor.authorLai, CS-
dc.date.accessioned2021-10-20T10:08:29Z-
dc.date.available2021-10-20T10:08:29Z-
dc.date.issued2021-
dc.identifier.citationACS Applied Materials & Interfaces, 2021, v. 13 n. 13, p. 15391-15398-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/305373-
dc.description.abstractThe implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick-
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectBi2O2Se-
dc.subjectRRAM-
dc.subjectCAFM-
dc.subjectkinetic Monte Carlo-
dc.subjectMAGIC-
dc.titleBi2O2Se-Based Memristor-Aided Logic-
dc.typeArticle-
dc.identifier.emailLi, LJ: lanceli1@hku.hk-
dc.identifier.authorityLi, LJ=rp02799-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.1c00177-
dc.identifier.pmid33723989-
dc.identifier.scopuseid_2-s2.0-85103765557-
dc.identifier.hkuros327593-
dc.identifier.volume13-
dc.identifier.issue13-
dc.identifier.spage15391-
dc.identifier.epage15398-
dc.identifier.isiWOS:000639014900054-
dc.publisher.placeUnited States-

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