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Article: GaN PNP light-emitting bipolar junction transistor
Title | GaN PNP light-emitting bipolar junction transistor |
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Authors | |
Keywords | bipolar junction transistor GaN light emitting diode monolithic integration |
Issue Date | 2021 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd |
Citation | Journal of Physics D: Applied Physics, 2021, v. 55 n. 1, p. article no. 015101 How to Cite? |
Abstract | An light-emitting bipolar transistor (LEBJT) has been developed in response to aspirations for on-chip electronics with GaN-based light-emitting diode (LED) devices. The design utilizes the existing p-n junction of an LED structure to construct a PNP bipolar junction transistor comprising two back-to-back p-n junctions, saving the need for customized structures or epitaxial regrowth. Two designs of monolithic GaN LEBJTs have been demonstrated in this work—an LEBJT with a larger emitter area size for conversion of electronic to optical signal, as well as an LEBJT with reduced emitter area for boosting of current gain. Employing an emitter comprising an array of nanopillars patterned by nanosphere lithography, the LEBJT exhibits an average current gain of 20 and a bandwidth of 180 MHz. |
Persistent Identifier | http://hdl.handle.net/10722/305331 |
ISSN | 2023 Impact Factor: 3.1 2023 SCImago Journal Rankings: 0.681 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Fu, WY | - |
dc.contributor.author | Choi, HW | - |
dc.date.accessioned | 2021-10-20T10:07:54Z | - |
dc.date.available | 2021-10-20T10:07:54Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Journal of Physics D: Applied Physics, 2021, v. 55 n. 1, p. article no. 015101 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10722/305331 | - |
dc.description.abstract | An light-emitting bipolar transistor (LEBJT) has been developed in response to aspirations for on-chip electronics with GaN-based light-emitting diode (LED) devices. The design utilizes the existing p-n junction of an LED structure to construct a PNP bipolar junction transistor comprising two back-to-back p-n junctions, saving the need for customized structures or epitaxial regrowth. Two designs of monolithic GaN LEBJTs have been demonstrated in this work—an LEBJT with a larger emitter area size for conversion of electronic to optical signal, as well as an LEBJT with reduced emitter area for boosting of current gain. Employing an emitter comprising an array of nanopillars patterned by nanosphere lithography, the LEBJT exhibits an average current gain of 20 and a bandwidth of 180 MHz. | - |
dc.language | eng | - |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd | - |
dc.relation.ispartof | Journal of Physics D: Applied Physics | - |
dc.rights | Journal of Physics D: Applied Physics. Copyright © Institute of Physics Publishing. | - |
dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
dc.subject | bipolar junction transistor | - |
dc.subject | GaN | - |
dc.subject | light emitting diode | - |
dc.subject | monolithic integration | - |
dc.title | GaN PNP light-emitting bipolar junction transistor | - |
dc.type | Article | - |
dc.identifier.email | Fu, WY: wyfu@hku.hk | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.authority | Fu, WY=rp02840 | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/1361-6463/ac296b | - |
dc.identifier.scopus | eid_2-s2.0-85117693769 | - |
dc.identifier.hkuros | 327345 | - |
dc.identifier.volume | 55 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | article no. 015101 | - |
dc.identifier.epage | article no. 015101 | - |
dc.identifier.isi | WOS:000704491300001 | - |
dc.publisher.place | United Kingdom | - |