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Article: Design and Synthesis of Solution-Processable Donor–Acceptor Dithienophosphole Oxide Derivatives for Multilevel Organic Resistive Memories

TitleDesign and Synthesis of Solution-Processable Donor–Acceptor Dithienophosphole Oxide Derivatives for Multilevel Organic Resistive Memories
Authors
Issue Date2020
PublisherAmerican Chemical Society. The Journal's web site is located at https://pubs.acs.org/journal/amlcef
Citation
ACS Materials Letters, 2020, v. 2 n. 12, p. 1590-1597 How to Cite?
AbstractA class of solution-processable, donor–acceptor-decorated dithienophosphole oxide derivatives has been successfully synthesized and employed to fabricate solution-processed resistive memory devices with a simple indium–tin oxide/active layer/aluminum structure. The intramolecular charge transfer (ICT) characters of the donor–acceptor dithienophosphole oxide derivatives were established from photophysical, solvatochromic, and computational studies. The number of conductance states in the organic memory devices was found to be altered by slight changes in molecular structures. The mechanism for the tristable memory property of the devices was proposed based on the correlation of the extent of ICT characters and the computed structural parameters of the compounds, current–voltage characteristics of the devices and the fitting to theoretical conduction models. These findings offer important insights for the realization of multilevel resistive memory devices through the modification of the ICT character of the active compounds.
Persistent Identifierhttp://hdl.handle.net/10722/304655
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.003
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCheng, YH-
dc.contributor.authorWong, HL-
dc.contributor.authorHong, EYH-
dc.contributor.authorLeung, MY-
dc.contributor.authorLai, SL-
dc.contributor.authorYam, VWW-
dc.date.accessioned2021-10-05T02:33:15Z-
dc.date.available2021-10-05T02:33:15Z-
dc.date.issued2020-
dc.identifier.citationACS Materials Letters, 2020, v. 2 n. 12, p. 1590-1597-
dc.identifier.issn2639-4979-
dc.identifier.urihttp://hdl.handle.net/10722/304655-
dc.description.abstractA class of solution-processable, donor–acceptor-decorated dithienophosphole oxide derivatives has been successfully synthesized and employed to fabricate solution-processed resistive memory devices with a simple indium–tin oxide/active layer/aluminum structure. The intramolecular charge transfer (ICT) characters of the donor–acceptor dithienophosphole oxide derivatives were established from photophysical, solvatochromic, and computational studies. The number of conductance states in the organic memory devices was found to be altered by slight changes in molecular structures. The mechanism for the tristable memory property of the devices was proposed based on the correlation of the extent of ICT characters and the computed structural parameters of the compounds, current–voltage characteristics of the devices and the fitting to theoretical conduction models. These findings offer important insights for the realization of multilevel resistive memory devices through the modification of the ICT character of the active compounds.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at https://pubs.acs.org/journal/amlcef-
dc.relation.ispartofACS Materials Letters-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.titleDesign and Synthesis of Solution-Processable Donor–Acceptor Dithienophosphole Oxide Derivatives for Multilevel Organic Resistive Memories-
dc.typeArticle-
dc.identifier.emailCheng, YH: dsmc130@hku.hk-
dc.identifier.emailLai, SL: slllai@hku.hk-
dc.identifier.emailYam, VWW: deanmail@hku.hk-
dc.identifier.authorityYam, VWW=rp00822-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsmaterialslett.0c00387-
dc.identifier.scopuseid_2-s2.0-85097111678-
dc.identifier.hkuros326344-
dc.identifier.volume2-
dc.identifier.issue12-
dc.identifier.spage1590-
dc.identifier.epage1597-
dc.identifier.isiWOS:000599198900006-
dc.publisher.placeUnited States-

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