File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Capillary instabilities in thin films. II. Kinetics

TitleCapillary instabilities in thin films. II. Kinetics
Authors
Issue Date1986
Citation
Journal of Applied Physics, 1986, v. 60, n. 1, p. 255-260 How to Cite?
AbstractWe consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t-3/4[log 3(t/ ρ4c)]. Small holes with a radii less than ρc shrink, where ρc is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size ( ρeq) scales as ρ2eq or ρ4eq for evaporation/condensation or surface diffusion kinetics, respectively.
Persistent Identifierhttp://hdl.handle.net/10722/303808
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSrolovitz, D. J.-
dc.contributor.authorSafran, S. A.-
dc.date.accessioned2021-09-15T08:26:03Z-
dc.date.available2021-09-15T08:26:03Z-
dc.date.issued1986-
dc.identifier.citationJournal of Applied Physics, 1986, v. 60, n. 1, p. 255-260-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/303808-
dc.description.abstractWe consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t-3/4[log 3(t/ ρ4c)]. Small holes with a radii less than ρc shrink, where ρc is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size ( ρeq) scales as ρ2eq or ρ4eq for evaporation/condensation or surface diffusion kinetics, respectively.-
dc.languageeng-
dc.relation.ispartofJournal of Applied Physics-
dc.titleCapillary instabilities in thin films. II. Kinetics-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.337691-
dc.identifier.scopuseid_2-s2.0-0001324399-
dc.identifier.volume60-
dc.identifier.issue1-
dc.identifier.spage255-
dc.identifier.epage260-
dc.identifier.isiWOS:A1986C870100037-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats