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Article: Surface segregation during deposition

TitleSurface segregation during deposition
Authors
Eykholt, R.Srolovitz, D. J.
Issue Date1986
Citation
Journal of Applied Physics, 1986, v. 60, n. 5, p. 1793-1796 How to Cite?
DOI: http://dx.doi.org/10.1063/1.337222
AbstractBoth the steady-state and transient solute (impurity) concentrations at the surface of a film during its deposition are calculated as a function of deposition rate, temperature, diffusivity, bulk film solute concentration, and segregation energy. The steady-state solute concentration at the surface is found to increase upon increasing either the solute diffusivity or the magnitude of the (negative) segregation energy, or upon decreasing the deposition rate. The transient concentration profile at the start of deposition relaxes toward the steady-state profile as 1/t. Implications of the present results for film growth mechanisms and methods to control the degree of segregation via manipulation of deposition parameters are discussed.
Persistent Identifierhttp://hdl.handle.net/10722/303320
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1986D621300039

 

DC FieldValueLanguage
dc.contributor.authorEykholt, R.-
dc.contributor.authorSrolovitz, D. J.-
dc.date.accessioned2021-09-15T08:25:04Z-
dc.date.available2021-09-15T08:25:04Z-
dc.date.issued1986-
dc.identifier.citationJournal of Applied Physics, 1986, v. 60, n. 5, p. 1793-1796-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/303320-
dc.description.abstractBoth the steady-state and transient solute (impurity) concentrations at the surface of a film during its deposition are calculated as a function of deposition rate, temperature, diffusivity, bulk film solute concentration, and segregation energy. The steady-state solute concentration at the surface is found to increase upon increasing either the solute diffusivity or the magnitude of the (negative) segregation energy, or upon decreasing the deposition rate. The transient concentration profile at the start of deposition relaxes toward the steady-state profile as 1/t. Implications of the present results for film growth mechanisms and methods to control the degree of segregation via manipulation of deposition parameters are discussed.-
dc.languageeng-
dc.relation.ispartofJournal of Applied Physics-
dc.titleSurface segregation during deposition-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.337222-
dc.identifier.scopuseid_2-s2.0-36549094711-
dc.identifier.volume60-
dc.identifier.issue5-
dc.identifier.spage1793-
dc.identifier.epage1796-
dc.identifier.isiWOS:A1986D621300039-

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