File Download
There are no files associated with this item.
Supplementary
-
Citations:
- Scopus: 0
- Appears in Collections:
Conference Paper: Stress development during growth of oxide films
Title | Stress development during growth of oxide films |
---|---|
Authors | |
Issue Date | 2004 |
Citation | Proceedings - Electrochemical Society, 2004, v. PV 2004-16, p. 279-293 How to Cite? |
Abstract | The generation of stresses in polycrystalline oxide films formed via the oxidation of a substrate is analyzed using a new continuum model. The model includes a description of the polycrystalline microstructure in two dimensions. The diffusion of all independent components, the rate of the oxidation reaction and the effect of stresses on these are considered in a thermodynamically self-consistent manner. Grain boundaries serve both as high diffusivity paths and as sites for oxide formation. Different diffusion controlled oxidation regimes (rapid oxygen/cation diffusion, comparable oxygen/cation diffusivities) and different grain boundary/bulk diffusivity ratios are examined within this framework. A homogenized strain one-dimensional treatment captures the correct signs of stresses and through-thickness stress gradients observed in experiments. Numerical solution of the two-dimensional problem reveals large lateral stress gradients, with stresses concentrated around the grain boundaries. While the average in-plane stress is compressive and the stress at the film/substrate interface near the grain boundary highly so, large tensile stresses are observed near the grain boundary at the film surface. The grain boundary diffusivity has a significant effect on the stress gradients, with larger diffusivities leading to smaller stress gradients. The predictions compare favorably with experiment. |
Persistent Identifier | http://hdl.handle.net/10722/303269 |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Krishnamurthy, R. | - |
dc.contributor.author | Srolovitz, D. J. | - |
dc.date.accessioned | 2021-09-15T08:24:58Z | - |
dc.date.available | 2021-09-15T08:24:58Z | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | Proceedings - Electrochemical Society, 2004, v. PV 2004-16, p. 279-293 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303269 | - |
dc.description.abstract | The generation of stresses in polycrystalline oxide films formed via the oxidation of a substrate is analyzed using a new continuum model. The model includes a description of the polycrystalline microstructure in two dimensions. The diffusion of all independent components, the rate of the oxidation reaction and the effect of stresses on these are considered in a thermodynamically self-consistent manner. Grain boundaries serve both as high diffusivity paths and as sites for oxide formation. Different diffusion controlled oxidation regimes (rapid oxygen/cation diffusion, comparable oxygen/cation diffusivities) and different grain boundary/bulk diffusivity ratios are examined within this framework. A homogenized strain one-dimensional treatment captures the correct signs of stresses and through-thickness stress gradients observed in experiments. Numerical solution of the two-dimensional problem reveals large lateral stress gradients, with stresses concentrated around the grain boundaries. While the average in-plane stress is compressive and the stress at the film/substrate interface near the grain boundary highly so, large tensile stresses are observed near the grain boundary at the film surface. The grain boundary diffusivity has a significant effect on the stress gradients, with larger diffusivities leading to smaller stress gradients. The predictions compare favorably with experiment. | - |
dc.language | eng | - |
dc.relation.ispartof | Proceedings - Electrochemical Society | - |
dc.title | Stress development during growth of oxide films | - |
dc.type | Conference_Paper | - |
dc.identifier.scopus | eid_2-s2.0-31744448085 | - |
dc.identifier.volume | PV 2004-16 | - |
dc.identifier.spage | 279 | - |
dc.identifier.epage | 293 | - |