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Article: Pyramidal structural defects in erbium silicide thin films
Title | Pyramidal structural defects in erbium silicide thin films |
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Authors | |
Issue Date | 2006 |
Citation | Applied Physics Letters, 2006, v. 88, n. 2, article no. 021908 How to Cite? |
Abstract | Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial Er Si2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate. © 2006 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/303265 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Tan, Eu Jin | - |
dc.contributor.author | Bouville, Mathieu | - |
dc.contributor.author | Chi, Dong Zhi | - |
dc.contributor.author | Pey, Kin Leong | - |
dc.contributor.author | Lee, Pooi See | - |
dc.contributor.author | Srolovitz, David J. | - |
dc.contributor.author | Tung, Chih Hang | - |
dc.date.accessioned | 2021-09-15T08:24:57Z | - |
dc.date.available | 2021-09-15T08:24:57Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Applied Physics Letters, 2006, v. 88, n. 2, article no. 021908 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303265 | - |
dc.description.abstract | Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial Er Si2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate. © 2006 American Institute of Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Pyramidal structural defects in erbium silicide thin films | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.2162862 | - |
dc.identifier.scopus | eid_2-s2.0-30744464082 | - |
dc.identifier.volume | 88 | - |
dc.identifier.issue | 2 | - |
dc.identifier.spage | article no. 021908 | - |
dc.identifier.epage | article no. 021908 | - |
dc.identifier.isi | WOS:000234606900019 | - |