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- Publisher Website: 10.1016/j.actamat.2004.04.036
- Scopus: eid_2-s2.0-3042800750
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Article: Stress distributions in growing polycrystalline oxide films
Title | Stress distributions in growing polycrystalline oxide films |
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Authors | |
Keywords | Oxidation Grain boundaries Theory Modelling Residual stresses |
Issue Date | 2004 |
Citation | Acta Materialia, 2004, v. 52, n. 13, p. 3761-3780 How to Cite? |
Abstract | We analyze the generation of stresses in polycrystalline oxide films formed via the oxidation of a substrate using a new continuum model. The model includes a description of the polycrystalline microstructure in two dimensions. The diffusion of all independent components, the rate of the oxidation reaction and the effect of stresses on these are accounted for in a thermodynamically self-consistent manner. Grain boundaries serve both as high diffusivity paths and as sites for oxide formation. Different diffusion controlled oxidation regimes (rapid oxygen/cation diffusion, comparable oxygen/cation diffusivities) and different grain boundary/bulk diffusivity ratios are examined within this framework. Numerical solutions reveal large lateral stress gradients, with stresses concentrated around the grain boundaries. While the average in-plane stress is compressive and the stress at the film/substrate interface near the grain boundary highly so, large tensile stresses are observed near the grain boundary at the film surface. These predictions are consistent with experimental observations on polycrystalline oxide growth. We also present analytical approximations for the stress distribution in the film that capture the essential features of the numerical results. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/303263 |
ISSN | 2023 Impact Factor: 8.3 2023 SCImago Journal Rankings: 2.916 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Krishnamurthy, R. | - |
dc.contributor.author | Srolovitz, D. J. | - |
dc.date.accessioned | 2021-09-15T08:24:57Z | - |
dc.date.available | 2021-09-15T08:24:57Z | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | Acta Materialia, 2004, v. 52, n. 13, p. 3761-3780 | - |
dc.identifier.issn | 1359-6454 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303263 | - |
dc.description.abstract | We analyze the generation of stresses in polycrystalline oxide films formed via the oxidation of a substrate using a new continuum model. The model includes a description of the polycrystalline microstructure in two dimensions. The diffusion of all independent components, the rate of the oxidation reaction and the effect of stresses on these are accounted for in a thermodynamically self-consistent manner. Grain boundaries serve both as high diffusivity paths and as sites for oxide formation. Different diffusion controlled oxidation regimes (rapid oxygen/cation diffusion, comparable oxygen/cation diffusivities) and different grain boundary/bulk diffusivity ratios are examined within this framework. Numerical solutions reveal large lateral stress gradients, with stresses concentrated around the grain boundaries. While the average in-plane stress is compressive and the stress at the film/substrate interface near the grain boundary highly so, large tensile stresses are observed near the grain boundary at the film surface. These predictions are consistent with experimental observations on polycrystalline oxide growth. We also present analytical approximations for the stress distribution in the film that capture the essential features of the numerical results. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. | - |
dc.language | eng | - |
dc.relation.ispartof | Acta Materialia | - |
dc.subject | Oxidation | - |
dc.subject | Grain boundaries | - |
dc.subject | Theory | - |
dc.subject | Modelling | - |
dc.subject | Residual stresses | - |
dc.title | Stress distributions in growing polycrystalline oxide films | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.actamat.2004.04.036 | - |
dc.identifier.scopus | eid_2-s2.0-3042800750 | - |
dc.identifier.volume | 52 | - |
dc.identifier.issue | 13 | - |
dc.identifier.spage | 3761 | - |
dc.identifier.epage | 3780 | - |
dc.identifier.isi | WOS:000223091100002 | - |