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- Publisher Website: 10.1103/PhysRevB.70.060102
- Scopus: eid_2-s2.0-19544363218
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Article: Strongly non-Arrhenius self-interstitial diffusion in vanadium
Title | Strongly non-Arrhenius self-interstitial diffusion in vanadium |
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Authors | |
Issue Date | 2004 |
Citation | Physical Review B - Condensed Matter and Materials Physics, 2004, v. 70, n. 6, article no. 060102 How to Cite? |
Abstract | We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular-dynamics simulations. The 〈111〉-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other 〈111〉 directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T < 600 K, this behavior arises from temperature-dependent correlations. At T > 600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T. |
Persistent Identifier | http://hdl.handle.net/10722/303242 |
ISSN | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zepeda-Ruiz, Luis A. | - |
dc.contributor.author | Rottler, Jörg | - |
dc.contributor.author | Han, Seungwu | - |
dc.contributor.author | Ackland, Graeme J. | - |
dc.contributor.author | Car, Roberto | - |
dc.contributor.author | Srolovitz, David J. | - |
dc.date.accessioned | 2021-09-15T08:24:55Z | - |
dc.date.available | 2021-09-15T08:24:55Z | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | Physical Review B - Condensed Matter and Materials Physics, 2004, v. 70, n. 6, article no. 060102 | - |
dc.identifier.issn | 0163-1829 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303242 | - |
dc.description.abstract | We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular-dynamics simulations. The 〈111〉-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other 〈111〉 directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T < 600 K, this behavior arises from temperature-dependent correlations. At T > 600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T. | - |
dc.language | eng | - |
dc.relation.ispartof | Physical Review B - Condensed Matter and Materials Physics | - |
dc.title | Strongly non-Arrhenius self-interstitial diffusion in vanadium | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1103/PhysRevB.70.060102 | - |
dc.identifier.scopus | eid_2-s2.0-19544363218 | - |
dc.identifier.volume | 70 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | article no. 060102 | - |
dc.identifier.epage | article no. 060102 | - |
dc.identifier.isi | WOS:000223716300002 | - |