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Article: Self-interstitial transport in vanadium

TitleSelf-interstitial transport in vanadium
Authors
KeywordsDiffusion
Interstitial
Molecular dynamics simulation
Vanadium
Dislocation loop
Issue Date2005
Citation
Acta Materialia, 2005, v. 53, n. 7, p. 1985-1994 How to Cite?
AbstractWe study the diffusion of self-interstitial atoms (SIAs) and SIA clusters in vanadium via molecular dynamics simulations with an improved Finnis-Sinclair potential (fit to first-principles results for SIA structure and energetics). The present results demonstrate that single SIAs exist in a 〈1 1 1〉-dumbbell configuration and migrate easily along 〈1 1 1〉 directions. Changes of direction through rotations into other 〈1 1 1〉 directions are infrequent at low temperatures, but become prominent at higher temperatures, thereby changing the migration path from predominantly one-dimensional to almost isotropically three-dimensional. SIA clusters (i.e., clusters of 〈1 1 1〉-dumbbells) can be described as perfect prismatic dislocation loops with Burgers vector and habit planes of 1/2〈1 1 1〉{2 2 0} that migrate only along their glide cylinder. SIA clusters also migrate along 〈1 1 1〉-directions, but do not rotate. Both single SIAs and their clusters exhibit a highly non-Arrhenius diffusivity, which originates from a combination of a temperature dependent correlation factor and the presence of very low migration barriers. At low temperature, the diffusion is approximately Arrhenius, while above room temperature, the diffusivity is a linear function of temperature. A simple model is proposed to describe these diffusion regimes and the transition between them. © 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/303233
ISSN
2023 Impact Factor: 8.3
2023 SCImago Journal Rankings: 2.916
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZepeda-Ruiz, Luis A.-
dc.contributor.authorRottler, Jörg-
dc.contributor.authorWirth, Brian D.-
dc.contributor.authorCar, Roberto-
dc.contributor.authorSrolovitz, David J.-
dc.date.accessioned2021-09-15T08:24:54Z-
dc.date.available2021-09-15T08:24:54Z-
dc.date.issued2005-
dc.identifier.citationActa Materialia, 2005, v. 53, n. 7, p. 1985-1994-
dc.identifier.issn1359-6454-
dc.identifier.urihttp://hdl.handle.net/10722/303233-
dc.description.abstractWe study the diffusion of self-interstitial atoms (SIAs) and SIA clusters in vanadium via molecular dynamics simulations with an improved Finnis-Sinclair potential (fit to first-principles results for SIA structure and energetics). The present results demonstrate that single SIAs exist in a 〈1 1 1〉-dumbbell configuration and migrate easily along 〈1 1 1〉 directions. Changes of direction through rotations into other 〈1 1 1〉 directions are infrequent at low temperatures, but become prominent at higher temperatures, thereby changing the migration path from predominantly one-dimensional to almost isotropically three-dimensional. SIA clusters (i.e., clusters of 〈1 1 1〉-dumbbells) can be described as perfect prismatic dislocation loops with Burgers vector and habit planes of 1/2〈1 1 1〉{2 2 0} that migrate only along their glide cylinder. SIA clusters also migrate along 〈1 1 1〉-directions, but do not rotate. Both single SIAs and their clusters exhibit a highly non-Arrhenius diffusivity, which originates from a combination of a temperature dependent correlation factor and the presence of very low migration barriers. At low temperature, the diffusion is approximately Arrhenius, while above room temperature, the diffusivity is a linear function of temperature. A simple model is proposed to describe these diffusion regimes and the transition between them. © 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.-
dc.languageeng-
dc.relation.ispartofActa Materialia-
dc.subjectDiffusion-
dc.subjectInterstitial-
dc.subjectMolecular dynamics simulation-
dc.subjectVanadium-
dc.subjectDislocation loop-
dc.titleSelf-interstitial transport in vanadium-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.actamat.2005.01.010-
dc.identifier.scopuseid_2-s2.0-14544308760-
dc.identifier.volume53-
dc.identifier.issue7-
dc.identifier.spage1985-
dc.identifier.epage1994-
dc.identifier.isiWOS:000228239600012-

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