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Article: Impurity effects on domain-growth kinetics. II. Potts model

TitleImpurity effects on domain-growth kinetics. II. Potts model
Authors
Srolovitz, David J.Grest, Gary S.
Issue Date1985
Citation
Physical Review B, 1985, v. 32, n. 5, p. 3021-3025 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.32.3021
AbstractThe development of order for the Q-state Potts model for 2
Persistent Identifierhttp://hdl.handle.net/10722/303216
ISSN
0163-1829
ISI Accession Number ID
WOS:A1985AQF4100038

 

DC FieldValueLanguage
dc.contributor.authorSrolovitz, David J.-
dc.contributor.authorGrest, Gary S.-
dc.date.accessioned2021-09-15T08:24:52Z-
dc.date.available2021-09-15T08:24:52Z-
dc.date.issued1985-
dc.identifier.citationPhysical Review B, 1985, v. 32, n. 5, p. 3021-3025-
dc.identifier.issn0163-1829-
dc.identifier.urihttp://hdl.handle.net/10722/303216-
dc.description.abstractThe development of order for the Q-state Potts model for 2<Q48 in the presence of static, random impurities is studied following a quench from high temperature (TTc) to very low temperatures. We find that the domain growth becomes pinned for quenches to T=0 and the average pinned domain area Af varies inversely with the concentration c of impurities. This value of the proportionality factor between Af and c-1 can be understood in terms of a simple topological analysis for large Q. © 1985 The American Physical Society.-
dc.languageeng-
dc.relation.ispartofPhysical Review B-
dc.titleImpurity effects on domain-growth kinetics. II. Potts model-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.32.3021-
dc.identifier.scopuseid_2-s2.0-0041935315-
dc.identifier.volume32-
dc.identifier.issue5-
dc.identifier.spage3021-
dc.identifier.epage3025-
dc.identifier.isiWOS:A1985AQF4100038-

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