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Article: Interatomic potential for vanadium suitable for radiation damage simulations

TitleInteratomic potential for vanadium suitable for radiation damage simulations
Authors
Han, SeungwuZepeda-Ruiz, Luis A.Ackland, Graeme J.Car, RobertoSrolovitz, David J.
Issue Date2003
Citation
Journal of Applied Physics, 2003, v. 93, n. 6, p. 3328-3335 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1555275
AbstractA procedure adopted to fit an interatomic potential for vanadium, which is suitable for radiation damage simulations was presented. The results of the systematic first-principles calculations of point defects in vanadium were reported. It was found through the simulations that it reproduces both perfect crystal properties and point defect formation energies.
Persistent Identifierhttp://hdl.handle.net/10722/303210
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000181376400030

 

DC FieldValueLanguage
dc.contributor.authorHan, Seungwu-
dc.contributor.authorZepeda-Ruiz, Luis A.-
dc.contributor.authorAckland, Graeme J.-
dc.contributor.authorCar, Roberto-
dc.contributor.authorSrolovitz, David J.-
dc.date.accessioned2021-09-15T08:24:51Z-
dc.date.available2021-09-15T08:24:51Z-
dc.date.issued2003-
dc.identifier.citationJournal of Applied Physics, 2003, v. 93, n. 6, p. 3328-3335-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/303210-
dc.description.abstractA procedure adopted to fit an interatomic potential for vanadium, which is suitable for radiation damage simulations was presented. The results of the systematic first-principles calculations of point defects in vanadium were reported. It was found through the simulations that it reproduces both perfect crystal properties and point defect formation energies.-
dc.languageeng-
dc.relation.ispartofJournal of Applied Physics-
dc.titleInteratomic potential for vanadium suitable for radiation damage simulations-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1555275-
dc.identifier.scopuseid_2-s2.0-0037444983-
dc.identifier.volume93-
dc.identifier.issue6-
dc.identifier.spage3328-
dc.identifier.epage3335-
dc.identifier.isiWOS:000181376400030-

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