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Article: Surface stress model for intrinsic stresses in thin films

TitleSurface stress model for intrinsic stresses in thin films
Authors
Cammarata, R. C.Trimble, T. M.Srolovitz, D. J.
Issue Date2000
Citation
Journal of Materials Research, 2000, v. 15, n. 11, p. 2468-2474 How to Cite?
DOI: http://dx.doi.org/10.1557/JMR.2000.0354
AbstractA simple model was presented for intrinsic stress generation in thin films resulting from surface stress effects. This mechanism can explain the origin of compressive stresses often observed during island growth prior to coalescence, as well as intrinsic compressive stresses reported for certain continuous, fully grown films. In some cases, surface stress effects may contribute to a sudden change in the intrinsic stress during island coalescence.
Persistent Identifierhttp://hdl.handle.net/10722/303177
ISSN
0884-2914
2022 Impact Factor: 2.7
2020 SCImago Journal Rankings: 0.788
ISI Accession Number ID
WOS:000165275400031

 

DC FieldValueLanguage
dc.contributor.authorCammarata, R. C.-
dc.contributor.authorTrimble, T. M.-
dc.contributor.authorSrolovitz, D. J.-
dc.date.accessioned2021-09-15T08:24:47Z-
dc.date.available2021-09-15T08:24:47Z-
dc.date.issued2000-
dc.identifier.citationJournal of Materials Research, 2000, v. 15, n. 11, p. 2468-2474-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/10722/303177-
dc.description.abstractA simple model was presented for intrinsic stress generation in thin films resulting from surface stress effects. This mechanism can explain the origin of compressive stresses often observed during island growth prior to coalescence, as well as intrinsic compressive stresses reported for certain continuous, fully grown films. In some cases, surface stress effects may contribute to a sudden change in the intrinsic stress during island coalescence.-
dc.languageeng-
dc.relation.ispartofJournal of Materials Research-
dc.titleSurface stress model for intrinsic stresses in thin films-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1557/JMR.2000.0354-
dc.identifier.scopuseid_2-s2.0-0034333905-
dc.identifier.volume15-
dc.identifier.issue11-
dc.identifier.spage2468-
dc.identifier.epage2474-
dc.identifier.isiWOS:000165275400031-

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