Etching effects during the chemical vapor deposition of (100) diamond

Abstract

Diamond films were grown by chemical deposition of hydrocarbon species in a vapor composed predominantly of hydrogen. The rate constants of the surface reactions and the concentrations of the gas-phase species were used as input to a variable time step Monte Carlo algorithm, which simulates the evolution of the diamond growth surface by tracking the occupancies of surface sites. The results of the combined tight binding and density functional theory quantum mechanical calculations are presented, suggesting that the etching of isolated, monomolecular moieties occurred at an appreciable rate, while etching from larger carbon islands was nor favorable.