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Article: The microstructure of non-polar a-plane (11-20) InGaN quantum wells
Title | The microstructure of non-polar a-plane (11-20) InGaN quantum wells |
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Authors | |
Issue Date | 2016 |
Citation | Journal of Applied Physics, 2016, v. 119, n. 17, article no. 175703 How to Cite? |
Abstract | Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution. |
Persistent Identifier | http://hdl.handle.net/10722/302323 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Griffiths, James T. | - |
dc.contributor.author | Oehler, Fabrice | - |
dc.contributor.author | Tang, Fengzai | - |
dc.contributor.author | Zhang, Siyuan | - |
dc.contributor.author | Fu, Wai Yuen | - |
dc.contributor.author | Zhu, Tongtong | - |
dc.contributor.author | Findlay, Scott D. | - |
dc.contributor.author | Zheng, Changlin | - |
dc.contributor.author | Etheridge, Joanne | - |
dc.contributor.author | Martin, Tomas L. | - |
dc.contributor.author | Bagot, Paul A.J. | - |
dc.contributor.author | Moody, Micheal P. | - |
dc.contributor.author | Sutherland, Danny | - |
dc.contributor.author | Dawson, Philip | - |
dc.contributor.author | Kappers, Menno J. | - |
dc.contributor.author | Humphreys, Colin J. | - |
dc.contributor.author | Oliver, Rachel A. | - |
dc.date.accessioned | 2021-08-30T13:58:14Z | - |
dc.date.available | 2021-08-30T13:58:14Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Journal of Applied Physics, 2016, v. 119, n. 17, article no. 175703 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/302323 | - |
dc.description.abstract | Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.title | The microstructure of non-polar a-plane (11-20) InGaN quantum wells | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4948299 | - |
dc.identifier.scopus | eid_2-s2.0-84968901846 | - |
dc.identifier.volume | 119 | - |
dc.identifier.issue | 17 | - |
dc.identifier.spage | article no. 175703 | - |
dc.identifier.epage | article no. 175703 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.isi | WOS:000377716500039 | - |