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Article: Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

TitleNanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
Authors
Griffiths, James T.Zhang, SiyuanRouet-Leduc, BertrandFu, Wai YuenBao, AnZhu, DandanWallis, David J.Howkins, AshleyBoyd, IanStowe, DavidKappers, Menno J.Humphreys, Colin J.Oliver, Rachel A.
Keywordslight emitting diodes
Nanocathodoluminescence
silicon doping
scanning transmission electron microscopy
quantum confined Stark effect
InGaN optoelectronics
Issue Date2015
Citation
Nano Letters, 2015, v. 15, n. 11, p. 7639-7643 How to Cite?
DOI: http://dx.doi.org/10.1021/acs.nanolett.5b03531
AbstractNanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.
Persistent Identifierhttp://hdl.handle.net/10722/302307
ISSN
1530-6984
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
PubMed Central ID
PMC4682848
ISI Accession Number ID
WOS:000364725400070

 

DC FieldValueLanguage
dc.contributor.authorGriffiths, James T.-
dc.contributor.authorZhang, Siyuan-
dc.contributor.authorRouet-Leduc, Bertrand-
dc.contributor.authorFu, Wai Yuen-
dc.contributor.authorBao, An-
dc.contributor.authorZhu, Dandan-
dc.contributor.authorWallis, David J.-
dc.contributor.authorHowkins, Ashley-
dc.contributor.authorBoyd, Ian-
dc.contributor.authorStowe, David-
dc.contributor.authorKappers, Menno J.-
dc.contributor.authorHumphreys, Colin J.-
dc.contributor.authorOliver, Rachel A.-
dc.date.accessioned2021-08-30T13:58:13Z-
dc.date.available2021-08-30T13:58:13Z-
dc.date.issued2015-
dc.identifier.citationNano Letters, 2015, v. 15, n. 11, p. 7639-7643-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/302307-
dc.description.abstractNanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectlight emitting diodes-
dc.subjectNanocathodoluminescence-
dc.subjectsilicon doping-
dc.subjectscanning transmission electron microscopy-
dc.subjectquantum confined Stark effect-
dc.subjectInGaN optoelectronics-
dc.titleNanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1021/acs.nanolett.5b03531-
dc.identifier.pmid26488912-
dc.identifier.pmcidPMC4682848-
dc.identifier.scopuseid_2-s2.0-84946943896-
dc.identifier.volume15-
dc.identifier.issue11-
dc.identifier.spage7639-
dc.identifier.epage7643-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000364725400070-

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