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Article: Elastic constants and critical thicknesses of ScGaN and ScAlN
| Title | Elastic constants and critical thicknesses of ScGaN and ScAlN |
|---|---|
| Authors | |
| Issue Date | 2013 |
| Citation | Journal of Applied Physics, 2013, v. 114, n. 24, article no. 243516 How to Cite? |
| Abstract | Elastic constants of hexagonal ScxGa1-xN and Sc xAl1-xN up to x = 0.375 were calculated using a stress-strain approach. C11, C33, C44, and C66 decreased while C12 and C13 increased slightly with increasing x. The biaxial [0001] Poisson ratios increased from 0.21 for GaN to 0.38 for Sc0.375Ga0.625 N and from 0.22 for AlN to 0.40 for Sc0.375Al0.625N, due to greater u values, in-plane bond lengths and bond ionicities. Subsequently, critical thicknesses for stress relaxation were calculated for ScxAl 1-xN/AlN, ScxGa1-xN/GaN, and Sc xAl1-xN/GaN heterostructures using an energy balance model. These range from 2 nm for Sc0.375Al0.625N/AlN and Sc0.375Ga0.625N/GaN to infinity for lattice-matched Sc0.18Al0.82N/GaN. © 2013 AIP Publishing LLC. |
| Persistent Identifier | http://hdl.handle.net/10722/302162 |
| ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zhang, S. | - |
| dc.contributor.author | Fu, W. Y. | - |
| dc.contributor.author | Holec, D. | - |
| dc.contributor.author | Humphreys, C. J. | - |
| dc.contributor.author | Moram, M. A. | - |
| dc.date.accessioned | 2021-08-30T13:57:55Z | - |
| dc.date.available | 2021-08-30T13:57:55Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Journal of Applied Physics, 2013, v. 114, n. 24, article no. 243516 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/302162 | - |
| dc.description.abstract | Elastic constants of hexagonal ScxGa1-xN and Sc xAl1-xN up to x = 0.375 were calculated using a stress-strain approach. C11, C33, C44, and C66 decreased while C12 and C13 increased slightly with increasing x. The biaxial [0001] Poisson ratios increased from 0.21 for GaN to 0.38 for Sc0.375Ga0.625 N and from 0.22 for AlN to 0.40 for Sc0.375Al0.625N, due to greater u values, in-plane bond lengths and bond ionicities. Subsequently, critical thicknesses for stress relaxation were calculated for ScxAl 1-xN/AlN, ScxGa1-xN/GaN, and Sc xAl1-xN/GaN heterostructures using an energy balance model. These range from 2 nm for Sc0.375Al0.625N/AlN and Sc0.375Ga0.625N/GaN to infinity for lattice-matched Sc0.18Al0.82N/GaN. © 2013 AIP Publishing LLC. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Journal of Applied Physics | - |
| dc.title | Elastic constants and critical thicknesses of ScGaN and ScAlN | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1063/1.4848036 | - |
| dc.identifier.scopus | eid_2-s2.0-84891716008 | - |
| dc.identifier.volume | 114 | - |
| dc.identifier.issue | 24 | - |
| dc.identifier.spage | article no. 243516 | - |
| dc.identifier.epage | article no. 243516 | - |
| dc.identifier.isi | WOS:000329173200024 | - |