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Article: Structural characterisation of improved GaN epilayers grown on a Ge(111) substrate
Title | Structural characterisation of improved GaN epilayers grown on a Ge(111) substrate |
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Authors | |
Issue Date | 2011 |
Citation | Applied Physics Express, 2011, v. 4, n. 9, article no. 091001 How to Cite? |
Abstract | Despite the large lattice mismatch between GaN and Ge of 20.1%, the successful growth of GaN on Ge(111) using plasma-assisted molecular beam epitaxy (PA-MBE) has been achieved. Recent work has shown that the crystal quality of GaN can be improved using either a miscut substrate or a higher growth temperature (above 800°C), to enhance the step-flow growth. This paper reports the structural characterisation of these improved GaN epilayers grown on Ge. The threading dislocation density has been measured using cross-sectional transmission electron microscopy (TEM) imaging. The polarity of the epilayers is determined using convergent beam electron diffraction (CBED). © 2011 The Japan Society of Applied Physics. |
Persistent Identifier | http://hdl.handle.net/10722/302147 |
ISSN | 2023 Impact Factor: 2.3 2023 SCImago Journal Rankings: 0.487 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhang, Yucheng | - |
dc.contributor.author | Fu, Wai Yuan | - |
dc.contributor.author | Humphreys, Colin | - |
dc.contributor.author | Lieten, Ruben | - |
dc.date.accessioned | 2021-08-30T13:57:53Z | - |
dc.date.available | 2021-08-30T13:57:53Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | Applied Physics Express, 2011, v. 4, n. 9, article no. 091001 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | http://hdl.handle.net/10722/302147 | - |
dc.description.abstract | Despite the large lattice mismatch between GaN and Ge of 20.1%, the successful growth of GaN on Ge(111) using plasma-assisted molecular beam epitaxy (PA-MBE) has been achieved. Recent work has shown that the crystal quality of GaN can be improved using either a miscut substrate or a higher growth temperature (above 800°C), to enhance the step-flow growth. This paper reports the structural characterisation of these improved GaN epilayers grown on Ge. The threading dislocation density has been measured using cross-sectional transmission electron microscopy (TEM) imaging. The polarity of the epilayers is determined using convergent beam electron diffraction (CBED). © 2011 The Japan Society of Applied Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Express | - |
dc.title | Structural characterisation of improved GaN epilayers grown on a Ge(111) substrate | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1143/APEX.4.091001 | - |
dc.identifier.scopus | eid_2-s2.0-80052567244 | - |
dc.identifier.volume | 4 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | article no. 091001 | - |
dc.identifier.epage | article no. 091001 | - |
dc.identifier.eissn | 1882-0786 | - |
dc.identifier.isi | WOS:000294673300001 | - |