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- Publisher Website: 10.1143/APEX.4.065503
- Scopus: eid_2-s2.0-79958808852
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Article: Dislocation climb in c-plane ALN films
Title | Dislocation climb in c-plane ALN films |
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Authors | |
Issue Date | 2011 |
Citation | Applied Physics Express, 2011, v. 4, n. 6, article no. 065503 How to Cite? |
Abstract | A series of AlN films of increasing thickness (up to 4 μm) were grown on c-plane sapphire by metalorganic vapour phase epitaxy. Plan-view transmission electron microscopy (TEM) images reveal that the dislocation density at the film surface reduces with increasing film thickness, whereas cross-sectional TEM data reveal that dislocation reduction continues to occur beneath the film surface during growth, resulting in the preferential annihilation of c-type and/or (a + c)-type dislocations. We conclude that dislocation movement occurs by climb during AlN growth. © 2011 The Japan Society of Applied Physics. |
Persistent Identifier | http://hdl.handle.net/10722/302146 |
ISSN | 2023 Impact Factor: 2.3 2023 SCImago Journal Rankings: 0.487 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Fu, Wai Yuen | - |
dc.contributor.author | Kappers, Menno J. | - |
dc.contributor.author | Zhang, Yucheng | - |
dc.contributor.author | Humphreys, Colin J. | - |
dc.contributor.author | Moram, Michelle A. | - |
dc.date.accessioned | 2021-08-30T13:57:53Z | - |
dc.date.available | 2021-08-30T13:57:53Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | Applied Physics Express, 2011, v. 4, n. 6, article no. 065503 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | http://hdl.handle.net/10722/302146 | - |
dc.description.abstract | A series of AlN films of increasing thickness (up to 4 μm) were grown on c-plane sapphire by metalorganic vapour phase epitaxy. Plan-view transmission electron microscopy (TEM) images reveal that the dislocation density at the film surface reduces with increasing film thickness, whereas cross-sectional TEM data reveal that dislocation reduction continues to occur beneath the film surface during growth, resulting in the preferential annihilation of c-type and/or (a + c)-type dislocations. We conclude that dislocation movement occurs by climb during AlN growth. © 2011 The Japan Society of Applied Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Express | - |
dc.title | Dislocation climb in c-plane ALN films | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1143/APEX.4.065503 | - |
dc.identifier.scopus | eid_2-s2.0-79958808852 | - |
dc.identifier.volume | 4 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | article no. 065503 | - |
dc.identifier.epage | article no. 065503 | - |
dc.identifier.eissn | 1882-0786 | - |
dc.identifier.isi | WOS:000291479300045 | - |