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Article: Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

TitleEvidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging
Authors
Keywordsnanoscale imaging
polarity control
carrier localization
UV emitters
Issue Date2021
Citation
Physica Status Solidi - Rapid Research Letters, 2021, v. 15 n. 6, article no. 2100035 How to Cite?
AbstractAlGaN-based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal–organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer-scale polarity domains in the MQWs is promising for the development of efficient UV emitters.
Persistent Identifierhttp://hdl.handle.net/10722/301865
ISSN
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.655
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCui, Mei-
dc.contributor.authorGuo, Wei-
dc.contributor.authorXu, Houqiang-
dc.contributor.authorJiang, Jie'an-
dc.contributor.authorChen, Li-
dc.contributor.authorMitra, Somak-
dc.contributor.authorRoqan, Iman S.-
dc.contributor.authorJiang, Haibo-
dc.contributor.authorLi, Xiaohang-
dc.contributor.authorYe, Jichun-
dc.date.accessioned2021-08-19T02:20:54Z-
dc.date.available2021-08-19T02:20:54Z-
dc.date.issued2021-
dc.identifier.citationPhysica Status Solidi - Rapid Research Letters, 2021, v. 15 n. 6, article no. 2100035-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/10722/301865-
dc.description.abstractAlGaN-based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal–organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer-scale polarity domains in the MQWs is promising for the development of efficient UV emitters.-
dc.languageeng-
dc.relation.ispartofPhysica Status Solidi - Rapid Research Letters-
dc.subjectnanoscale imaging-
dc.subjectpolarity control-
dc.subjectcarrier localization-
dc.subjectUV emitters-
dc.titleEvidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssr.202100035-
dc.identifier.scopuseid_2-s2.0-85102464311-
dc.identifier.volume15-
dc.identifier.issue6-
dc.identifier.spagearticle no. 2100035-
dc.identifier.epagearticle no. 2100035-
dc.identifier.eissn1862-6270-
dc.identifier.isiWOS:000628742800001-

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