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Article: Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures
Title | Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures |
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Authors | |
Issue Date | 2019 |
Citation | Optica, 2019, v. 6, n. 8, p. 1058-1062 How to Cite? |
Abstract | The 2D band diagram comprising out-of-plane potentials has been ubiquitously utilized for III-nitride heterostructures. Here, we propose the 3D band diagram based on unambiguous evidences in luminescence and carrier dynamics for lateral polarity junction quantum wells: although electrons and holes are separated out-of-plane in quantum wells by polarization, different band diagram heights lead to secondary carrier injection in-plane, causing electrons to transport from the III- to N-polar domains to recombine with holes therein with large wavefunction overlap. We also show that utilization of the 3D band diagram can be extended to single-polarity structures to analyze carrier transport and dynamics, providing new dimensions for accurate optical device design. |
Persistent Identifier | http://hdl.handle.net/10722/301846 |
ISSN | 2023 Impact Factor: 8.4 2023 SCImago Journal Rankings: 3.549 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Guo, Wei | - |
dc.contributor.author | Mitra, Somak | - |
dc.contributor.author | Jiang, Jiean | - |
dc.contributor.author | Xu, Houqiang | - |
dc.contributor.author | Sheikhi, Moheb | - |
dc.contributor.author | Sun, Haiding | - |
dc.contributor.author | Tian, Kangkai | - |
dc.contributor.author | Zhang, Zi Hui | - |
dc.contributor.author | Jiang, Haibo | - |
dc.contributor.author | Roqan, Iman S. | - |
dc.contributor.author | Li, Xiaohang | - |
dc.contributor.author | Ye, Jichun | - |
dc.date.accessioned | 2021-08-19T02:20:51Z | - |
dc.date.available | 2021-08-19T02:20:51Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Optica, 2019, v. 6, n. 8, p. 1058-1062 | - |
dc.identifier.issn | 2334-2536 | - |
dc.identifier.uri | http://hdl.handle.net/10722/301846 | - |
dc.description.abstract | The 2D band diagram comprising out-of-plane potentials has been ubiquitously utilized for III-nitride heterostructures. Here, we propose the 3D band diagram based on unambiguous evidences in luminescence and carrier dynamics for lateral polarity junction quantum wells: although electrons and holes are separated out-of-plane in quantum wells by polarization, different band diagram heights lead to secondary carrier injection in-plane, causing electrons to transport from the III- to N-polar domains to recombine with holes therein with large wavefunction overlap. We also show that utilization of the 3D band diagram can be extended to single-polarity structures to analyze carrier transport and dynamics, providing new dimensions for accurate optical device design. | - |
dc.language | eng | - |
dc.relation.ispartof | Optica | - |
dc.rights | © 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. | - |
dc.title | Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1364/OPTICA.6.001058 | - |
dc.identifier.scopus | eid_2-s2.0-85073317535 | - |
dc.identifier.volume | 6 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 1058 | - |
dc.identifier.epage | 1062 | - |
dc.identifier.isi | WOS:000482136700019 | - |