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Article: Electrodeposition of (111)-Oriented and Nanotwin-Doped Nanocrystalline Cu with Ultrahigh Strength for 3D IC Application

TitleElectrodeposition of (111)-Oriented and Nanotwin-Doped Nanocrystalline Cu with Ultrahigh Strength for 3D IC Application
Authors
Keywordsdirect current
electrodeposition
nanocrystalline Cu
superfilling
ultrahigh strength
Issue Date2021
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2021, v. 32 n. 22, p. article no. 225702 How to Cite?
AbstractThe mechanical performance of electroplated Cu plays a crucial role in next-generation Cu-to-Cu direct bonding for the three-dimension integrated circuit (3D IC). This work reports directcurrent electroplated (111)-preferred and nanotwin-doped nanocrystalline Cu, of which strength is at the forefront performance compared with all reported electroplated Cu materials. Tension and compression tests are performed to present the ultrahigh ultimate strength of 977 MPa and 1158 MPa, respectively. The microstructure of nanoscale Cu grains with an average grain size around 61 nm greatly contributes to the ultrahigh strength as described by the grain refinement effect. A gap between the obtained yield strength and the Hall–Petch relationship indicates the presence of extra strengthening mechanisms. X-ray diffraction and transmission electron microscopy analysis identify the highly (111) oriented texture and sporadic twins with optimum thicknesses, which can effectively impede intragranular dislocation movements, thus further advance the strength. Via filling capability and high throughput are also demonstrated in the patterned wafer plating. The combination of ultrahigh tensile/compressive strength, (111) preferred texture, superfilling capability and high throughput satisfies the critical requirement of Cu interconnects plating technology towards the industrial manufacturing in advanced 3D IC packaging application.
Persistent Identifierhttp://hdl.handle.net/10722/301530
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZHENG, Z-
dc.contributor.authorHuang, YT-
dc.contributor.authorWANG, Z-
dc.contributor.authorZHANG, M-
dc.contributor.authorWang, WT-
dc.contributor.authorChung, CC-
dc.contributor.authorCherng, SJ-
dc.contributor.authorTsai, YH-
dc.contributor.authorLi, PC-
dc.contributor.authorLu, Z-
dc.contributor.authorChen, CM-
dc.contributor.authorFeng, SP-
dc.date.accessioned2021-08-09T03:40:25Z-
dc.date.available2021-08-09T03:40:25Z-
dc.date.issued2021-
dc.identifier.citationNanotechnology, 2021, v. 32 n. 22, p. article no. 225702-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/301530-
dc.description.abstractThe mechanical performance of electroplated Cu plays a crucial role in next-generation Cu-to-Cu direct bonding for the three-dimension integrated circuit (3D IC). This work reports directcurrent electroplated (111)-preferred and nanotwin-doped nanocrystalline Cu, of which strength is at the forefront performance compared with all reported electroplated Cu materials. Tension and compression tests are performed to present the ultrahigh ultimate strength of 977 MPa and 1158 MPa, respectively. The microstructure of nanoscale Cu grains with an average grain size around 61 nm greatly contributes to the ultrahigh strength as described by the grain refinement effect. A gap between the obtained yield strength and the Hall–Petch relationship indicates the presence of extra strengthening mechanisms. X-ray diffraction and transmission electron microscopy analysis identify the highly (111) oriented texture and sporadic twins with optimum thicknesses, which can effectively impede intragranular dislocation movements, thus further advance the strength. Via filling capability and high throughput are also demonstrated in the patterned wafer plating. The combination of ultrahigh tensile/compressive strength, (111) preferred texture, superfilling capability and high throughput satisfies the critical requirement of Cu interconnects plating technology towards the industrial manufacturing in advanced 3D IC packaging application.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano-
dc.relation.ispartofNanotechnology-
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectdirect current-
dc.subjectelectrodeposition-
dc.subjectnanocrystalline Cu-
dc.subjectsuperfilling-
dc.subjectultrahigh strength-
dc.titleElectrodeposition of (111)-Oriented and Nanotwin-Doped Nanocrystalline Cu with Ultrahigh Strength for 3D IC Application-
dc.typeArticle-
dc.identifier.emailWang, WT: wtwang77@hku.hk-
dc.identifier.emailFeng, SP: hpfeng@hku.hk-
dc.identifier.authorityFeng, SP=rp01533-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6528/abe904-
dc.identifier.pmid33621959-
dc.identifier.scopuseid_2-s2.0-85103479403-
dc.identifier.hkuros324112-
dc.identifier.hkuros324136-
dc.identifier.volume32-
dc.identifier.issue22-
dc.identifier.spagearticle no. 225702-
dc.identifier.epagearticle no. 225702-
dc.identifier.isiWOS:000627736100001-
dc.publisher.placeUnited Kingdom-

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