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Article: Near-room-temperature rhombohedral Ge1-xPbxTe thermoelectrics

TitleNear-room-temperature rhombohedral Ge1-xPbxTe thermoelectrics
Authors
KeywordsThermoelectric
Rhombohedral-distortion
Near-room-temperature
Ge1-xPbxTe alloys
Band degeneracy
Issue Date2020
PublisherElsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics
Citation
Materials Today Physics, 2020, v. 15, p. article no. 100260 How to Cite?
AbstractThermoelectric GeTe alloys have recently attracted renewed interests due to the extraordinary performance. It is particularly interesting in the low-symmetry structure, where the symmetry-breaking induced diversity in the arrangement in energy of split valence bands might enable an optimal band convergence for thermoelectric enhancements. This in principle leads to an extra degree of freedom for advancing GeTe thermoelectrics though a control of the degree of rhombohedral-distortion in the structure. Here we demonstrate this concept and realize its extraordinariness near room temperature, an extremely important temperature range for thermoelectric power generation/cooling applications in which very few options on materials other than conventional Bi2Te3 are currently available. This is enabled by a continuous manipulation of the rhombohedral-distortion in simple Ge1-xPbxTe solid solutions quenched from the high-temperature single phase region, a simultaneous optimization of carrier concentration and a reduction in lattice thermal conductivity due to PbTe-alloying. The resultant figure of merit, zT, at 200–350 K, is highly competitive to that of commercially available p-type Bi2Te3 alloys and higher than that of other known p-type thermoelectrics.
Persistent Identifierhttp://hdl.handle.net/10722/300595
ISSN
2020 Impact Factor: 9.298
2020 SCImago Journal Rankings: 2.878

 

DC FieldValueLanguage
dc.contributor.authorBu, Z-
dc.contributor.authorChen, Z-
dc.contributor.authorZhang, X-
dc.contributor.authorLin, S-
dc.contributor.authorMAO, J-
dc.contributor.authorLi, W-
dc.contributor.authorChen, Y-
dc.contributor.authorPei, Y-
dc.date.accessioned2021-06-18T14:54:15Z-
dc.date.available2021-06-18T14:54:15Z-
dc.date.issued2020-
dc.identifier.citationMaterials Today Physics, 2020, v. 15, p. article no. 100260-
dc.identifier.issn2542-5293-
dc.identifier.urihttp://hdl.handle.net/10722/300595-
dc.description.abstractThermoelectric GeTe alloys have recently attracted renewed interests due to the extraordinary performance. It is particularly interesting in the low-symmetry structure, where the symmetry-breaking induced diversity in the arrangement in energy of split valence bands might enable an optimal band convergence for thermoelectric enhancements. This in principle leads to an extra degree of freedom for advancing GeTe thermoelectrics though a control of the degree of rhombohedral-distortion in the structure. Here we demonstrate this concept and realize its extraordinariness near room temperature, an extremely important temperature range for thermoelectric power generation/cooling applications in which very few options on materials other than conventional Bi2Te3 are currently available. This is enabled by a continuous manipulation of the rhombohedral-distortion in simple Ge1-xPbxTe solid solutions quenched from the high-temperature single phase region, a simultaneous optimization of carrier concentration and a reduction in lattice thermal conductivity due to PbTe-alloying. The resultant figure of merit, zT, at 200–350 K, is highly competitive to that of commercially available p-type Bi2Te3 alloys and higher than that of other known p-type thermoelectrics.-
dc.languageeng-
dc.publisherElsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics-
dc.relation.ispartofMaterials Today Physics-
dc.subjectThermoelectric-
dc.subjectRhombohedral-distortion-
dc.subjectNear-room-temperature-
dc.subjectGe1-xPbxTe alloys-
dc.subjectBand degeneracy-
dc.titleNear-room-temperature rhombohedral Ge1-xPbxTe thermoelectrics-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.mtphys.2020.100260-
dc.identifier.scopuseid_2-s2.0-85089916284-
dc.identifier.hkuros322973-
dc.identifier.volume15-
dc.identifier.spagearticle no. 100260-
dc.identifier.epagearticle no. 100260-
dc.publisher.placeUnited Kingdom-

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