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Conference Paper: Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors

TitleReliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors
Authors
Issue Date2020
PublisherIEEE.
Citation
2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 12-18 December 2020. In International Electron Devices Meeting (IEDM), 2020 How to Cite?
Abstract2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS 2 . The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO 2 /PTCDA stack is over 8.42 MV/cm, which is two times that of HfO 2 /Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under E BD = 6.5 MV/cm, which shows 85% improvement than HfO 2 /Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO 2 /Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.
Persistent Identifierhttp://hdl.handle.net/10722/299188
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYu, Z-
dc.contributor.authorNing, H-
dc.contributor.authorCheng, CC-
dc.contributor.authorLi, W-
dc.contributor.authorLiu, L-
dc.contributor.authorMeng, W-
dc.contributor.authorLuo, Z-
dc.contributor.authorLi, T-
dc.contributor.authorCai, S-
dc.contributor.authorWang, P-
dc.contributor.authorChang, WH-
dc.contributor.authorChien, CH-
dc.contributor.authorShi, Y-
dc.contributor.authorXu, Y-
dc.contributor.authorLi, LJ-
dc.contributor.authorWang, X-
dc.date.accessioned2021-04-30T07:46:19Z-
dc.date.available2021-04-30T07:46:19Z-
dc.date.issued2020-
dc.identifier.citation2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 12-18 December 2020. In International Electron Devices Meeting (IEDM), 2020-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/299188-
dc.description.abstract2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS 2 . The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO 2 /PTCDA stack is over 8.42 MV/cm, which is two times that of HfO 2 /Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under E BD = 6.5 MV/cm, which shows 85% improvement than HfO 2 /Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO 2 /Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleReliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors-
dc.typeConference_Paper-
dc.identifier.emailLi, LJ: lanceli1@hku.hk-
dc.identifier.authorityLi, LJ=rp02799-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM13553.2020.9371917-
dc.identifier.scopuseid_2-s2.0-85102924308-
dc.identifier.hkuros700003943-
dc.identifier.isiWOS:000717011600029-

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