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Article: Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides

TitleObserving grain boundaries in CVD-grown monolayer transition metal dichalcogenides
Authors
KeywordsSapphire grain boundary
STEM
Atomic force microscopy
Transition metal dichalcogenides
Selective oxidation
TEM
Scanning electron microscopy
Issue Date2014
Citation
ACS Nano, 2014, v. 8, n. 11, p. 11401-11408 How to Cite?
AbstractTwo-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries. (Figure Presented).
Persistent Identifierhttp://hdl.handle.net/10722/298589
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLy, Thuc Hue-
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorZhao, Jiong-
dc.contributor.authorPerello, David J.-
dc.contributor.authorCichocka, Magdalena Ola-
dc.contributor.authorOh, Hye Min-
dc.contributor.authorChae, Sang Hoon-
dc.contributor.authorJeong, Hye Yun-
dc.contributor.authorYao, Fei-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLee, Young Hee-
dc.date.accessioned2021-04-08T03:08:49Z-
dc.date.available2021-04-08T03:08:49Z-
dc.date.issued2014-
dc.identifier.citationACS Nano, 2014, v. 8, n. 11, p. 11401-11408-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298589-
dc.description.abstractTwo-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries. (Figure Presented).-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectSapphire grain boundary-
dc.subjectSTEM-
dc.subjectAtomic force microscopy-
dc.subjectTransition metal dichalcogenides-
dc.subjectSelective oxidation-
dc.subjectTEM-
dc.subjectScanning electron microscopy-
dc.titleObserving grain boundaries in CVD-grown monolayer transition metal dichalcogenides-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nn504470q-
dc.identifier.scopuseid_2-s2.0-84912574117-
dc.identifier.volume8-
dc.identifier.issue11-
dc.identifier.spage11401-
dc.identifier.epage11408-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000345553000043-
dc.identifier.issnl1936-0851-

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