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Article: Highly flexible MoS 2 thin-film transistors with ion gel dielectrics

TitleHighly flexible MoS <inf>2</inf> thin-film transistors with ion gel dielectrics
Authors
Pu, JiangYomogida, YoheiLiu, Keng KuLi, Lain JongIwasa, YoshihiroTakenobu, Taishi
Keywordsflexible electronics
Two-dimensional material
molybdenum disulfide
electric double-layer transistor
transition metal dichalcogenide
Issue Date2012
Citation
Nano Letters, 2012, v. 12, n. 8, p. 4013-4017 How to Cite?
DOI: http://dx.doi.org/10.1021/nl301335q
AbstractMolybdenum disulfide (MoS ) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm /(V ·s)) and a high on/off current ratio (10 ). Furthermore, the MoS transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS films make them suitable for use in large-area flexible electronics. © 2012 American Chemical Society. 2 2 2 2 5
Persistent Identifierhttp://hdl.handle.net/10722/298570
ISSN
1530-6984
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID
WOS:000307211000023

 

DC FieldValueLanguage
dc.contributor.authorPu, Jiang-
dc.contributor.authorYomogida, Yohei-
dc.contributor.authorLiu, Keng Ku-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorIwasa, Yoshihiro-
dc.contributor.authorTakenobu, Taishi-
dc.date.accessioned2021-04-08T03:08:47Z-
dc.date.available2021-04-08T03:08:47Z-
dc.date.issued2012-
dc.identifier.citationNano Letters, 2012, v. 12, n. 8, p. 4013-4017-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298570-
dc.description.abstractMolybdenum disulfide (MoS ) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm /(V ·s)) and a high on/off current ratio (10 ). Furthermore, the MoS transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS films make them suitable for use in large-area flexible electronics. © 2012 American Chemical Society. 2 2 2 2 5-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectflexible electronics-
dc.subjectTwo-dimensional material-
dc.subjectmolybdenum disulfide-
dc.subjectelectric double-layer transistor-
dc.subjecttransition metal dichalcogenide-
dc.titleHighly flexible MoS <inf>2</inf> thin-film transistors with ion gel dielectrics-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl301335q-
dc.identifier.scopuseid_2-s2.0-84864666522-
dc.identifier.volume12-
dc.identifier.issue8-
dc.identifier.spage4013-
dc.identifier.epage4017-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000307211000023-
dc.identifier.issnl1530-6984-

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