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- Publisher Website: 10.1002/adma.201104798
- Scopus: eid_2-s2.0-84860329324
- PMID: 22467187
- WOS: WOS:000303117900019
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Article: Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition
Title | Synthesis of large-area MoS <inf>2</inf> atomic layers with chemical vapor deposition |
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Authors | |
Keywords | chemical vapor deposition field-effect transistors molybdenum disulfide layered materials |
Issue Date | 2012 |
Citation | Advanced Materials, 2012, v. 24, n. 17, p. 2320-2325 How to Cite? |
Abstract | Large-area MoS atomic layers are synthesized on SiO substrates by chemical vapor deposition using MoO and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS monolayer. The TEM images verify that the synthesized MoS sheets are highly crystalline. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 3 2 2 |
Persistent Identifier | http://hdl.handle.net/10722/298557 |
ISSN | 2023 Impact Factor: 27.4 2023 SCImago Journal Rankings: 9.191 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lee, Yi Hsien | - |
dc.contributor.author | Zhang, Xin Quan | - |
dc.contributor.author | Zhang, Wenjing | - |
dc.contributor.author | Chang, Mu Tung | - |
dc.contributor.author | Lin, Cheng Te | - |
dc.contributor.author | Chang, Kai Di | - |
dc.contributor.author | Yu, Ya Chu | - |
dc.contributor.author | Wang, Jacob Tse Wei | - |
dc.contributor.author | Chang, Chia Seng | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Lin, Tsung Wu | - |
dc.date.accessioned | 2021-04-08T03:08:45Z | - |
dc.date.available | 2021-04-08T03:08:45Z | - |
dc.date.issued | 2012 | - |
dc.identifier.citation | Advanced Materials, 2012, v. 24, n. 17, p. 2320-2325 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298557 | - |
dc.description.abstract | Large-area MoS atomic layers are synthesized on SiO substrates by chemical vapor deposition using MoO and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS monolayer. The TEM images verify that the synthesized MoS sheets are highly crystalline. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 3 2 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Advanced Materials | - |
dc.subject | chemical vapor deposition | - |
dc.subject | field-effect transistors | - |
dc.subject | molybdenum disulfide | - |
dc.subject | layered materials | - |
dc.title | Synthesis of large-area MoS <inf>2</inf> atomic layers with chemical vapor deposition | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/adma.201104798 | - |
dc.identifier.pmid | 22467187 | - |
dc.identifier.scopus | eid_2-s2.0-84860329324 | - |
dc.identifier.volume | 24 | - |
dc.identifier.issue | 17 | - |
dc.identifier.spage | 2320 | - |
dc.identifier.epage | 2325 | - |
dc.identifier.eissn | 1521-4095 | - |
dc.identifier.isi | WOS:000303117900019 | - |
dc.identifier.issnl | 0935-9648 | - |