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Article: Opening an electrical band gap of bilayer graphene with molecular doping

TitleOpening an electrical band gap of bilayer graphene with molecular doping
Authors
Keywordson/off current ratio
doping
triazine
band gap opening
transistor
bilayer grapheme
Raman spectroscopy
Issue Date2011
Citation
ACS Nano, 2011, v. 5, n. 9, p. 7517-7524 How to Cite?
AbstractThe opening of an electrical band gap in graphene is crucial for its application for logic circuits. Recent studies have shown that an energy gap in Bernal-stacked bilayer graphene can be generated by applying an electric displacement field. Molecular doping has also been proposed to open the electrical gap of bilayer graphene by breaking either in-plane symmetry or inversion symmetry; however, no direct observation of an electrical gap has been reported. Here we discover that the organic molecule triazine is able to form a uniform thin coating on the top surface of a bilayer graphene, which efficiently blocks the accessible doping sites and prevents ambient p-doping on the top layer. The charge distribution asymmetry between the top and bottom layers can then be enhanced simply by increasing the p-doping from oxygen/moisture to the bottom layer. The on/off current ratio for a bottom-gated bilayer transistor operated in ambient condition is improved by at least 1 order of magnitude. The estimated electrical band gap is up to ∼111 meV at room temperature. The observed electrical band gap dependence on the hole-carrier density increase agrees well with the recent density-functional theory calculations. This research provides a simple method to obtain a graphene bilayer transistor with a moderate on/off current ratio, which can be stably operated in air without the need to use an additional top gate. © 2011 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/298540
ISSN
2020 Impact Factor: 15.881
2015 SCImago Journal Rankings: 7.120

 

DC FieldValueLanguage
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorLin, Cheng Te-
dc.contributor.authorLiu, Keng Ku-
dc.contributor.authorTite, Teddy-
dc.contributor.authorSu, Ching Yuan-
dc.contributor.authorChang, Chung Huai-
dc.contributor.authorLee, Yi Hsien-
dc.contributor.authorChu, Chih Wei-
dc.contributor.authorWei, Kung Hwa-
dc.contributor.authorKuo, Jer Lai-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:43Z-
dc.date.available2021-04-08T03:08:43Z-
dc.date.issued2011-
dc.identifier.citationACS Nano, 2011, v. 5, n. 9, p. 7517-7524-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298540-
dc.description.abstractThe opening of an electrical band gap in graphene is crucial for its application for logic circuits. Recent studies have shown that an energy gap in Bernal-stacked bilayer graphene can be generated by applying an electric displacement field. Molecular doping has also been proposed to open the electrical gap of bilayer graphene by breaking either in-plane symmetry or inversion symmetry; however, no direct observation of an electrical gap has been reported. Here we discover that the organic molecule triazine is able to form a uniform thin coating on the top surface of a bilayer graphene, which efficiently blocks the accessible doping sites and prevents ambient p-doping on the top layer. The charge distribution asymmetry between the top and bottom layers can then be enhanced simply by increasing the p-doping from oxygen/moisture to the bottom layer. The on/off current ratio for a bottom-gated bilayer transistor operated in ambient condition is improved by at least 1 order of magnitude. The estimated electrical band gap is up to ∼111 meV at room temperature. The observed electrical band gap dependence on the hole-carrier density increase agrees well with the recent density-functional theory calculations. This research provides a simple method to obtain a graphene bilayer transistor with a moderate on/off current ratio, which can be stably operated in air without the need to use an additional top gate. © 2011 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjecton/off current ratio-
dc.subjectdoping-
dc.subjecttriazine-
dc.subjectband gap opening-
dc.subjecttransistor-
dc.subjectbilayer grapheme-
dc.subjectRaman spectroscopy-
dc.titleOpening an electrical band gap of bilayer graphene with molecular doping-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nn202463g-
dc.identifier.scopuseid_2-s2.0-80053329064-
dc.identifier.volume5-
dc.identifier.issue9-
dc.identifier.spage7517-
dc.identifier.epage7524-
dc.identifier.eissn1936-086X-
dc.identifier.issnl1936-0851-

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