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Article: Selective small-diameter metallic single-walled carbon nanotube removal by mere standing with anthraquinone and application to a field-effect transistor

TitleSelective small-diameter metallic single-walled carbon nanotube removal by mere standing with anthraquinone and application to a field-effect transistor
Authors
Issue Date2010
Citation
Journal of Physical Chemistry C, 2010, v. 114, n. 49, p. 21035-21041 How to Cite?
AbstractSmall-diameter metallic single-wall carbon nanotubes (SWNT) were separated from larger diameter semiconducting SWNT when CoMoCAT samples (supplied with abundance of (6,5) species) were left standing at ambient laboratory condition for a few days in dimethylformamide solution containing ethylanthraquinone (EAQ). SWNT enriched in larger diameter semiconducting species by this method were used to fabricate SWNT network-based thin film transistors (TFTs). The resulting devices had mobilities of 0.2 cm /(V s) and on/off ratios of about 10 . The on/off ratios were greatly improved, by approximately 2 orders of magnitude, over those of TFTs made with pristine SWNT. The enrichment in semiconducting tubes was corroborated by UV-vis-NIR absorption, photoluminescence excitation (PLE), and resonance Raman scattering spectroscopy. Density functional simulations show that hydroxyl radicals preferentially attack small-diameter metallic and then small-diameter semiconducting nanotubes over larger diameter semiconducting tubes. We propose that EAQ forms radicals in ambient lighted conditions, resulting in this diameter- and metallicity-selective reaction which increases the density of the target species, promoting their sedimentation under centrifugation. This simple method of obtaining semiconducting-enriched SWNT samples should be widely applicable for printed electronic devices. © 2010 American Chemical Society. 2 4
Persistent Identifierhttp://hdl.handle.net/10722/298515
ISSN
2020 Impact Factor: 4.126
2020 SCImago Journal Rankings: 1.401

 

DC FieldValueLanguage
dc.contributor.authorDai, Zhi-
dc.contributor.authorYan, Liangyu-
dc.contributor.authorAlam, Sk Mahasin-
dc.contributor.authorFeng, Junluo-
dc.contributor.authorMariathomas, Pyria Rose Divina-
dc.contributor.authorChen, Yuan-
dc.contributor.authorLi, Chang Ming-
dc.contributor.authorZhang, Qing-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLim, Kok Hwa-
dc.contributor.authorChan-Park, Mary B.-
dc.date.accessioned2021-04-08T03:08:40Z-
dc.date.available2021-04-08T03:08:40Z-
dc.date.issued2010-
dc.identifier.citationJournal of Physical Chemistry C, 2010, v. 114, n. 49, p. 21035-21041-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/10722/298515-
dc.description.abstractSmall-diameter metallic single-wall carbon nanotubes (SWNT) were separated from larger diameter semiconducting SWNT when CoMoCAT samples (supplied with abundance of (6,5) species) were left standing at ambient laboratory condition for a few days in dimethylformamide solution containing ethylanthraquinone (EAQ). SWNT enriched in larger diameter semiconducting species by this method were used to fabricate SWNT network-based thin film transistors (TFTs). The resulting devices had mobilities of 0.2 cm /(V s) and on/off ratios of about 10 . The on/off ratios were greatly improved, by approximately 2 orders of magnitude, over those of TFTs made with pristine SWNT. The enrichment in semiconducting tubes was corroborated by UV-vis-NIR absorption, photoluminescence excitation (PLE), and resonance Raman scattering spectroscopy. Density functional simulations show that hydroxyl radicals preferentially attack small-diameter metallic and then small-diameter semiconducting nanotubes over larger diameter semiconducting tubes. We propose that EAQ forms radicals in ambient lighted conditions, resulting in this diameter- and metallicity-selective reaction which increases the density of the target species, promoting their sedimentation under centrifugation. This simple method of obtaining semiconducting-enriched SWNT samples should be widely applicable for printed electronic devices. © 2010 American Chemical Society. 2 4-
dc.languageeng-
dc.relation.ispartofJournal of Physical Chemistry C-
dc.titleSelective small-diameter metallic single-walled carbon nanotube removal by mere standing with anthraquinone and application to a field-effect transistor-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp106398k-
dc.identifier.scopuseid_2-s2.0-78650288011-
dc.identifier.volume114-
dc.identifier.issue49-
dc.identifier.spage21035-
dc.identifier.epage21041-
dc.identifier.eissn1932-7455-
dc.identifier.issnl1932-7447-

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