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Article: Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition

TitleSynthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition
Authors
Keywordsborazine
Hexagonal boron nitride
chemical vapor deposition
Issue Date2010
Citation
Nano Letters, 2010, v. 10, n. 10, p. 4134-4139 How to Cite?
AbstractIn this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices. © 2010 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/298509
ISSN
2019 Impact Factor: 11.238
2015 SCImago Journal Rankings: 9.006

 

DC FieldValueLanguage
dc.contributor.authorShi, Yumeng-
dc.contributor.authorHamsen, Christoph-
dc.contributor.authorJia, Xiaoting-
dc.contributor.authorKim, Ki Kang-
dc.contributor.authorReina, Alfonso-
dc.contributor.authorHofmann, Mario-
dc.contributor.authorHsu, Allen Long-
dc.contributor.authorZhang, Kai-
dc.contributor.authorLi, Henan-
dc.contributor.authorJuang, Zhen Yu-
dc.contributor.authorDresselhaus, Mildred S.-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorKong, Jing-
dc.date.accessioned2021-04-08T03:08:39Z-
dc.date.available2021-04-08T03:08:39Z-
dc.date.issued2010-
dc.identifier.citationNano Letters, 2010, v. 10, n. 10, p. 4134-4139-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298509-
dc.description.abstractIn this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices. © 2010 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectborazine-
dc.subjectHexagonal boron nitride-
dc.subjectchemical vapor deposition-
dc.titleSynthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl1023707-
dc.identifier.scopuseid_2-s2.0-77958049842-
dc.identifier.volume10-
dc.identifier.issue10-
dc.identifier.spage4134-
dc.identifier.epage4139-
dc.identifier.eissn1530-6992-
dc.identifier.issnl1530-6984-

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