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Article: Enhancing the conductivity of transparent graphene films via doping

TitleEnhancing the conductivity of transparent graphene films via doping
Authors
Issue Date2010
Citation
Nanotechnology, 2010, v. 21, n. 28, article no. 285205 How to Cite?
AbstractWe report chemical doping (p-type) to reduce the sheet resistance of graphene films for the application of high-performance transparent conducting films. The graphene film synthesized by chemical vapor deposition was transferred to silicon oxide and quartz substrates using poly(methyl methacrylate). AuCl in nitromethane was used to dope the graphene films and the sheet resistance was reduced by up to 77% depending on the doping concentration. The p-type doping behavior was confirmed by characterizing the Raman G-band of the doped graphene film. Atomic force microscope and scanning electron microscope images reveal the deposition of Au particles on the film. The sizes of the Au particles are 10-100nm. The effect of doping was also investigated by transferring the graphene films onto quartz and poly(ethylene terephthalate) substrates. The sheet resistance reached 150 Ω/sq at 87% transmittance, which is comparable to those of indium tin oxide conducting film. The doping effect was manifested only with 1-2 layer graphene but not with multi-layer graphene. This approach advances the numerous applications of graphene films as transparent conducting electrodes. © 2010 IOP Publishing Ltd. 3
Persistent Identifierhttp://hdl.handle.net/10722/298498
ISSN
2019 Impact Factor: 3.551
2015 SCImago Journal Rankings: 1.196

 

DC FieldValueLanguage
dc.contributor.authorKim, Ki Kang-
dc.contributor.authorReina, Alfonso-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorPark, Hyesung-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLee, Young Hee-
dc.contributor.authorKong, Jing-
dc.date.accessioned2021-04-08T03:08:37Z-
dc.date.available2021-04-08T03:08:37Z-
dc.date.issued2010-
dc.identifier.citationNanotechnology, 2010, v. 21, n. 28, article no. 285205-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/298498-
dc.description.abstractWe report chemical doping (p-type) to reduce the sheet resistance of graphene films for the application of high-performance transparent conducting films. The graphene film synthesized by chemical vapor deposition was transferred to silicon oxide and quartz substrates using poly(methyl methacrylate). AuCl in nitromethane was used to dope the graphene films and the sheet resistance was reduced by up to 77% depending on the doping concentration. The p-type doping behavior was confirmed by characterizing the Raman G-band of the doped graphene film. Atomic force microscope and scanning electron microscope images reveal the deposition of Au particles on the film. The sizes of the Au particles are 10-100nm. The effect of doping was also investigated by transferring the graphene films onto quartz and poly(ethylene terephthalate) substrates. The sheet resistance reached 150 Ω/sq at 87% transmittance, which is comparable to those of indium tin oxide conducting film. The doping effect was manifested only with 1-2 layer graphene but not with multi-layer graphene. This approach advances the numerous applications of graphene films as transparent conducting electrodes. © 2010 IOP Publishing Ltd. 3-
dc.languageeng-
dc.relation.ispartofNanotechnology-
dc.titleEnhancing the conductivity of transparent graphene films via doping-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/21/28/285205-
dc.identifier.scopuseid_2-s2.0-77954161992-
dc.identifier.volume21-
dc.identifier.issue28-
dc.identifier.spagearticle no. 285205-
dc.identifier.epagearticle no. 285205-
dc.identifier.eissn1361-6528-
dc.identifier.issnl0957-4484-

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