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- Publisher Website: 10.1103/PhysRevB.79.115402
- Scopus: eid_2-s2.0-63149118636
- WOS: WOS:000264768900109
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Article: Effective doping of single-layer graphene from underlying SiO2 substrates
Title | Effective doping of single-layer graphene from underlying SiO<inf>2</inf> substrates |
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Authors | |
Issue Date | 2009 |
Citation | Physical Review B - Condensed Matter and Materials Physics, 2009, v. 79, n. 11, article no. 115402 How to Cite? |
Abstract | When a single-layer graphene (SLG) is on SiO substrates, the charge exchange at their interface results in a dipole, which direction strongly depends on the contact potential difference between the SLG and the substrates. Due to the longer experimental charge screening length of SLG than its thickness, the charge redistribution imposes effective p or n doping to SLG films. The substrate-dependent doping of SLG films is further confirmed by Raman and electrical measurements. Also, the unique electronic structures of SLG films make them sensitive to the doping rather than effective gating from the SiO substrates. © 2009 The American Physical Society. 2 2 |
Persistent Identifier | http://hdl.handle.net/10722/298474 |
ISSN | 2014 Impact Factor: 3.736 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Shi, Yumeng | - |
dc.contributor.author | Dong, Xiaochen | - |
dc.contributor.author | Chen, Peng | - |
dc.contributor.author | Wang, Junling | - |
dc.contributor.author | Li, Lain Jong | - |
dc.date.accessioned | 2021-04-08T03:08:30Z | - |
dc.date.available | 2021-04-08T03:08:30Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | Physical Review B - Condensed Matter and Materials Physics, 2009, v. 79, n. 11, article no. 115402 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298474 | - |
dc.description.abstract | When a single-layer graphene (SLG) is on SiO substrates, the charge exchange at their interface results in a dipole, which direction strongly depends on the contact potential difference between the SLG and the substrates. Due to the longer experimental charge screening length of SLG than its thickness, the charge redistribution imposes effective p or n doping to SLG films. The substrate-dependent doping of SLG films is further confirmed by Raman and electrical measurements. Also, the unique electronic structures of SLG films make them sensitive to the doping rather than effective gating from the SiO substrates. © 2009 The American Physical Society. 2 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Physical Review B - Condensed Matter and Materials Physics | - |
dc.title | Effective doping of single-layer graphene from underlying SiO<inf>2</inf> substrates | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1103/PhysRevB.79.115402 | - |
dc.identifier.scopus | eid_2-s2.0-63149118636 | - |
dc.identifier.volume | 79 | - |
dc.identifier.issue | 11 | - |
dc.identifier.spage | article no. 115402 | - |
dc.identifier.epage | article no. 115402 | - |
dc.identifier.eissn | 1550-235X | - |
dc.identifier.isi | WOS:000264768900109 | - |
dc.identifier.issnl | 1098-0121 | - |