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- Publisher Website: 10.1063/1.2978249
- Scopus: eid_2-s2.0-51349138287
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Article: Charge injection at carbon nanotube- SiO2 interface
Title | Charge injection at carbon nanotube- SiO<inf>2</inf> interface |
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Authors | |
Issue Date | 2008 |
Citation | Applied Physics Letters, 2008, v. 93, n. 9, article no. 093509 How to Cite? |
Abstract | Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. © 2008 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/298457 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Ong, Hock Guan | - |
dc.contributor.author | Cheah, Jun Wei | - |
dc.contributor.author | Chen, Lang | - |
dc.contributor.author | Tangtang, Hosea | - |
dc.contributor.author | Xu, Yanping | - |
dc.contributor.author | Li, Bing | - |
dc.contributor.author | Zhang, Hua | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Wang, Junling | - |
dc.date.accessioned | 2021-04-08T03:08:27Z | - |
dc.date.available | 2021-04-08T03:08:27Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | Applied Physics Letters, 2008, v. 93, n. 9, article no. 093509 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298457 | - |
dc.description.abstract | Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. © 2008 American Institute of Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Charge injection at carbon nanotube- SiO<inf>2</inf> interface | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.2978249 | - |
dc.identifier.scopus | eid_2-s2.0-51349138287 | - |
dc.identifier.volume | 93 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | article no. 093509 | - |
dc.identifier.epage | article no. 093509 | - |
dc.identifier.isi | WOS:000258975800082 | - |
dc.identifier.issnl | 0003-6951 | - |