Van der Waals epitaxy of MoS <inf>2</inf> layers using graphene as growth templates

Abstract

We present a method for synthesizing MoS /Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports,(1, 2) a much lower growth temperature of 400 °C is required for this procedure. The chemical vapor deposition of MoS on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS /Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts. © 2012 American Chemical Society. 2 2 2 2 2