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- Publisher Website: 10.1364/OE.16.007976
- Scopus: eid_2-s2.0-44649089376
- PMID: 18545507
- WOS: WOS:000256469900043
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Article: Near-field Raman imaging using optically trapped dielectric microsphere
Title | Near-field Raman imaging using optically trapped dielectric microsphere |
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Authors | |
Issue Date | 2008 |
Citation | Optics Express, 2008, v. 16, n. 11, p. 7976-7984 How to Cite? |
Abstract | The stumbling block of employing Raman imaging in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution, among which aperture and apertureless near-field Raman techniques are the most frequently used. In this letter, we report a new approach in doing near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a polystyrene microsphere over the sample surface in water. We have used this technique to resolve PMOS transistors with SiGe source drain stressors with poly-Si gates, as well as gold nanopatterns with excellent reproducibility. ©2008 Optical Society of America. |
Persistent Identifier | http://hdl.handle.net/10722/298418 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Kasim, Johnson | - |
dc.contributor.author | Yu, Ting | - |
dc.contributor.author | You, Yu Meng | - |
dc.contributor.author | Liu, Jin Ping | - |
dc.contributor.author | See, Alex | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Shen, Ze Xiang | - |
dc.date.accessioned | 2021-04-08T03:08:22Z | - |
dc.date.available | 2021-04-08T03:08:22Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | Optics Express, 2008, v. 16, n. 11, p. 7976-7984 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298418 | - |
dc.description.abstract | The stumbling block of employing Raman imaging in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution, among which aperture and apertureless near-field Raman techniques are the most frequently used. In this letter, we report a new approach in doing near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a polystyrene microsphere over the sample surface in water. We have used this technique to resolve PMOS transistors with SiGe source drain stressors with poly-Si gates, as well as gold nanopatterns with excellent reproducibility. ©2008 Optical Society of America. | - |
dc.language | eng | - |
dc.relation.ispartof | Optics Express | - |
dc.title | Near-field Raman imaging using optically trapped dielectric microsphere | - |
dc.type | Article | - |
dc.description.nature | link_to_OA_fulltext | - |
dc.identifier.doi | 10.1364/OE.16.007976 | - |
dc.identifier.pmid | 18545507 | - |
dc.identifier.scopus | eid_2-s2.0-44649089376 | - |
dc.identifier.volume | 16 | - |
dc.identifier.issue | 11 | - |
dc.identifier.spage | 7976 | - |
dc.identifier.epage | 7984 | - |
dc.identifier.eissn | 1094-4087 | - |
dc.identifier.isi | WOS:000256469900043 | - |
dc.identifier.issnl | 1094-4087 | - |