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Article: Strain engineering and epitaxial stabilization of halide perovskites

TitleStrain engineering and epitaxial stabilization of halide perovskites
Authors
Issue Date2020
Citation
Nature, 2020, v. 577, n. 7789, p. 209-215 How to Cite?
AbstractStrain engineering is a powerful tool with which to enhance semiconductor device performance . Halide perovskites have shown great promise in device applications owing to their remarkable electronic and optoelectronic properties . Although applying strain to halide perovskites has been frequently attempted, including using hydrostatic pressurization , electrostriction , annealing , van der Waals force , thermal expansion mismatch , and heat-induced substrate phase transition , the controllable and device-compatible strain engineering of halide perovskites by chemical epitaxy remains a challenge, owing to the absence of suitable lattice-mismatched epitaxial substrates. Here we report the strained epitaxial growth of halide perovskite single-crystal thin films on lattice-mismatched halide perovskite substrates. We investigated strain engineering of α-formamidinium lead iodide (α-FAPbI ) using both experimental techniques and theoretical calculations. By tailoring the substrate composition—and therefore its lattice parameter—a compressive strain as high as 2.4 per cent is applied to the epitaxial α-FAPbI thin film. We demonstrate that this strain effectively changes the crystal structure, reduces the bandgap and increases the hole mobility of α-FAPbI . Strained epitaxy is also shown to have a substantial stabilization effect on the α-FAPbI phase owing to the synergistic effects of epitaxial stabilization and strain neutralization. As an example, strain engineering is applied to enhance the performance of an α-FAPbI -based photodetector. 1,2 3–5 6–8 9 10–12 13 14 15 3 3 3 3 3
Persistent Identifierhttp://hdl.handle.net/10722/298339
ISSN
2023 Impact Factor: 50.5
2023 SCImago Journal Rankings: 18.509
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Yimu-
dc.contributor.authorLei, Yusheng-
dc.contributor.authorLi, Yuheng-
dc.contributor.authorYu, Yugang-
dc.contributor.authorCai, Jinze-
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorRao, Rahul-
dc.contributor.authorGu, Yue-
dc.contributor.authorWang, Chunfeng-
dc.contributor.authorChoi, Woojin-
dc.contributor.authorHu, Hongjie-
dc.contributor.authorWang, Chonghe-
dc.contributor.authorLi, Yang-
dc.contributor.authorSong, Jiawei-
dc.contributor.authorZhang, Jingxin-
dc.contributor.authorQi, Baiyan-
dc.contributor.authorLin, Muyang-
dc.contributor.authorZhang, Zhuorui-
dc.contributor.authorIslam, Ahmad E.-
dc.contributor.authorMaruyama, Benji-
dc.contributor.authorDayeh, Shadi-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorYang, Kesong-
dc.contributor.authorLo, Yu Hwa-
dc.contributor.authorXu, Sheng-
dc.date.accessioned2021-04-08T03:08:11Z-
dc.date.available2021-04-08T03:08:11Z-
dc.date.issued2020-
dc.identifier.citationNature, 2020, v. 577, n. 7789, p. 209-215-
dc.identifier.issn0028-0836-
dc.identifier.urihttp://hdl.handle.net/10722/298339-
dc.description.abstractStrain engineering is a powerful tool with which to enhance semiconductor device performance . Halide perovskites have shown great promise in device applications owing to their remarkable electronic and optoelectronic properties . Although applying strain to halide perovskites has been frequently attempted, including using hydrostatic pressurization , electrostriction , annealing , van der Waals force , thermal expansion mismatch , and heat-induced substrate phase transition , the controllable and device-compatible strain engineering of halide perovskites by chemical epitaxy remains a challenge, owing to the absence of suitable lattice-mismatched epitaxial substrates. Here we report the strained epitaxial growth of halide perovskite single-crystal thin films on lattice-mismatched halide perovskite substrates. We investigated strain engineering of α-formamidinium lead iodide (α-FAPbI ) using both experimental techniques and theoretical calculations. By tailoring the substrate composition—and therefore its lattice parameter—a compressive strain as high as 2.4 per cent is applied to the epitaxial α-FAPbI thin film. We demonstrate that this strain effectively changes the crystal structure, reduces the bandgap and increases the hole mobility of α-FAPbI . Strained epitaxy is also shown to have a substantial stabilization effect on the α-FAPbI phase owing to the synergistic effects of epitaxial stabilization and strain neutralization. As an example, strain engineering is applied to enhance the performance of an α-FAPbI -based photodetector. 1,2 3–5 6–8 9 10–12 13 14 15 3 3 3 3 3-
dc.languageeng-
dc.relation.ispartofNature-
dc.titleStrain engineering and epitaxial stabilization of halide perovskites-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/s41586-019-1868-x-
dc.identifier.pmid31915395-
dc.identifier.scopuseid_2-s2.0-85077558143-
dc.identifier.volume577-
dc.identifier.issue7789-
dc.identifier.spage209-
dc.identifier.epage215-
dc.identifier.eissn1476-4687-
dc.identifier.isiWOS:000506682500035-
dc.identifier.issnl0028-0836-

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