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Article: Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter

TitleMetal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter
Authors
Keywordstransition metal dichalcogenides
2D materials
selective growth
heterojunctions
molybdenum diselenide
chemical vapor deposition
tungsten diselenide
Issue Date2019
Citation
Advanced Materials, 2019, v. 31, n. 18, article no. 1900861 How to Cite?
Abstract2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe and n-type MoSe is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position. 2 2
DescriptionAccepted manuscript is available on the publisher website.
Persistent Identifierhttp://hdl.handle.net/10722/298302
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorTang, Hao Ling-
dc.contributor.authorTseng, Chien Chih-
dc.contributor.authorHan, Yimo-
dc.contributor.authorAljarb, Areej-
dc.contributor.authorHuang, Jing Kai-
dc.contributor.authorWan, Yi-
dc.contributor.authorFu, Jui Han-
dc.contributor.authorZhang, Xixiang-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorMuller, David A.-
dc.contributor.authorTakenobu, Taishi-
dc.contributor.authorTung, Vincent-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:07Z-
dc.date.available2021-04-08T03:08:07Z-
dc.date.issued2019-
dc.identifier.citationAdvanced Materials, 2019, v. 31, n. 18, article no. 1900861-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/298302-
dc.descriptionAccepted manuscript is available on the publisher website.-
dc.description.abstract2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe and n-type MoSe is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position. 2 2-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjecttransition metal dichalcogenides-
dc.subject2D materials-
dc.subjectselective growth-
dc.subjectheterojunctions-
dc.subjectmolybdenum diselenide-
dc.subjectchemical vapor deposition-
dc.subjecttungsten diselenide-
dc.titleMetal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1002/adma.201900861-
dc.identifier.pmid30907033-
dc.identifier.scopuseid_2-s2.0-85063397538-
dc.identifier.volume31-
dc.identifier.issue18-
dc.identifier.spagearticle no. 1900861-
dc.identifier.epagearticle no. 1900861-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000469242400029-
dc.identifier.issnl0935-9648-

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