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Article: Cross-plane thermoelectric figure of merit in graphene - C 60 heterostructures at room temperature

TitleCross-plane thermoelectric figure of merit in graphene - C <inf>60</inf> heterostructures at room temperature
Authors
Olaya, DanielTseng, Chien ChihChang, Wen HaoHsieh, Wen PinLi, Lain JongJuang, Zhen YuHernández, Yenny
KeywordsThermoelectric
Graphene
Transient Harman Method
Layered material
Heterostructure
C Fullerene 60
Issue Date2019
Citation
FlatChem, 2019, v. 14, article no. 100089 How to Cite?
DOI: http://dx.doi.org/10.1016/j.flatc.2019.100089
AbstractThe quantum nature of low dimensional materials such as graphene and C is yet to be exploited in thermoelectric (TE) applications. A source of reproducible high-quality graphene is its growth by chemical vapour deposition (CVD) and subsequent transfer onto arbitrary substrates. In this work, heterostructures based on graphene and C clusters were studied by means of the Transient Harman Method (THM). This study revealed a thermoelectric figure of merit, ZT, up to 1.4. The efficiency of the measured devices is attributed to a decrease of the thermal conductivity due to the presence of the layers and a significant value of the Seebeck coefficient (up to 200 μV/K). This type of heterostructures could also be prepared on transparent flexible substrates with a measured ZT of 0.36. 60 60
Persistent Identifierhttp://hdl.handle.net/10722/298300
ISI Accession Number ID
WOS:000468158900001

 

DC FieldValueLanguage
dc.contributor.authorOlaya, Daniel-
dc.contributor.authorTseng, Chien Chih-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorHsieh, Wen Pin-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorJuang, Zhen Yu-
dc.contributor.authorHernández, Yenny-
dc.date.accessioned2021-04-08T03:08:06Z-
dc.date.available2021-04-08T03:08:06Z-
dc.date.issued2019-
dc.identifier.citationFlatChem, 2019, v. 14, article no. 100089-
dc.identifier.urihttp://hdl.handle.net/10722/298300-
dc.description.abstractThe quantum nature of low dimensional materials such as graphene and C is yet to be exploited in thermoelectric (TE) applications. A source of reproducible high-quality graphene is its growth by chemical vapour deposition (CVD) and subsequent transfer onto arbitrary substrates. In this work, heterostructures based on graphene and C clusters were studied by means of the Transient Harman Method (THM). This study revealed a thermoelectric figure of merit, ZT, up to 1.4. The efficiency of the measured devices is attributed to a decrease of the thermal conductivity due to the presence of the layers and a significant value of the Seebeck coefficient (up to 200 μV/K). This type of heterostructures could also be prepared on transparent flexible substrates with a measured ZT of 0.36. 60 60-
dc.languageeng-
dc.relation.ispartofFlatChem-
dc.subjectThermoelectric-
dc.subjectGraphene-
dc.subjectTransient Harman Method-
dc.subjectLayered material-
dc.subjectHeterostructure-
dc.subjectC Fullerene 60-
dc.titleCross-plane thermoelectric figure of merit in graphene - C <inf>60</inf> heterostructures at room temperature-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.flatc.2019.100089-
dc.identifier.scopuseid_2-s2.0-85063139780-
dc.identifier.volume14-
dc.identifier.spagearticle no. 100089-
dc.identifier.epagearticle no. 100089-
dc.identifier.eissn2452-2627-
dc.identifier.isiWOS:000468158900001-
dc.identifier.issnl2452-2627-

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