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Article: Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors

TitleEffective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS<inf>2</inf> transistors
Authors
Keywordsfield-effect transistors
standard wet cleaning
N-methyl-2-pyrrolidone
monolayer MoS devices 2
Issue Date2019
Citation
Nano Research, 2019, v. 12, n. 2, p. 303-308 How to Cite?
AbstractTwo-dimensional semiconductors, such as MoS are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS , but also significantly improves the performance of monolayer MoS field-effect-transistors. Superior device on current of 12 μA·μm for a channel length of 400 nm, contact resistance of 15 kΩ·μm, field-effect mobility of 15.5 cm ·V ·s , and the average on–off current ratio of 10 were successfully demonstrated [Figure not available: see fulltext.]. 2 2 2 2 –1 2 –1 –1 8
Persistent Identifierhttp://hdl.handle.net/10722/298287
ISSN
2023 Impact Factor: 9.5
2023 SCImago Journal Rankings: 2.539
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Po Chun-
dc.contributor.authorLin, Chih Pin-
dc.contributor.authorHong, Chuan Jie-
dc.contributor.authorYang, Chih Hao-
dc.contributor.authorLin, Yun Yan-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorYu, Tung Yuan-
dc.contributor.authorSu, Chun Jung-
dc.contributor.authorLi, Kai Shin-
dc.contributor.authorZhong, Yuan Liang-
dc.contributor.authorHou, Tuo Hung-
dc.contributor.authorLan, Yann Wen-
dc.date.accessioned2021-04-08T03:08:05Z-
dc.date.available2021-04-08T03:08:05Z-
dc.date.issued2019-
dc.identifier.citationNano Research, 2019, v. 12, n. 2, p. 303-308-
dc.identifier.issn1998-0124-
dc.identifier.urihttp://hdl.handle.net/10722/298287-
dc.description.abstractTwo-dimensional semiconductors, such as MoS are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS , but also significantly improves the performance of monolayer MoS field-effect-transistors. Superior device on current of 12 μA·μm for a channel length of 400 nm, contact resistance of 15 kΩ·μm, field-effect mobility of 15.5 cm ·V ·s , and the average on–off current ratio of 10 were successfully demonstrated [Figure not available: see fulltext.]. 2 2 2 2 –1 2 –1 –1 8-
dc.languageeng-
dc.relation.ispartofNano Research-
dc.subjectfield-effect transistors-
dc.subjectstandard wet cleaning-
dc.subjectN-methyl-2-pyrrolidone-
dc.subjectmonolayer MoS devices 2-
dc.titleEffective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS<inf>2</inf> transistors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s12274-018-2215-5-
dc.identifier.scopuseid_2-s2.0-85055726650-
dc.identifier.volume12-
dc.identifier.issue2-
dc.identifier.spage303-
dc.identifier.epage308-
dc.identifier.eissn1998-0000-
dc.identifier.isiWOS:000455549200008-
dc.identifier.issnl1998-0000-

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