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Article: Facile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light

TitleFacile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light
Authors
Keywordstransition-metal dichalcogenides
two-dimensional
atomic defects
doping
transmission electron microscopy
atomic force microscopy
Issue Date2018
Citation
ACS Applied Materials and Interfaces, 2018, v. 10, n. 35, p. 29893-29901 How to Cite?
AbstractTwo-dimensional (2D) materials have been emerging as potential candidates for the next-generation materials in various technology fields. The performance of the devices based on these 2D materials depends on their intrinsic band structures as well as the extrinsic (doping) effects such as surrounding chemicals and environmental oxygen/moisture, which strongly determines their Fermi energy level. Herein, we report the UV treatments on the 2D transition-metal dichalcogenides, to controllably dope the samples without damaging the crystal structures or quenching the luminescence properties. More surprisingly, both n-type and p-type doping can be achieved depending on the initial status of the sample and the UV treatment conditions. The doping mechanisms were elaborated on the atomic scale with transmission electron microscopy and ab initio calculations. The facile doping by UV light has potential to be integrated with photolithography processes, aiming for the large-scale integrated device/circuits design and fabrications.
Persistent Identifierhttp://hdl.handle.net/10722/298277
ISSN
2023 Impact Factor: 8.3
2023 SCImago Journal Rankings: 2.058
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLy, Thuc Hue-
dc.contributor.authorDeng, Qingming-
dc.contributor.authorDoan, Manh Ha-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorZhao, Jiong-
dc.date.accessioned2021-04-08T03:08:04Z-
dc.date.available2021-04-08T03:08:04Z-
dc.date.issued2018-
dc.identifier.citationACS Applied Materials and Interfaces, 2018, v. 10, n. 35, p. 29893-29901-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/298277-
dc.description.abstractTwo-dimensional (2D) materials have been emerging as potential candidates for the next-generation materials in various technology fields. The performance of the devices based on these 2D materials depends on their intrinsic band structures as well as the extrinsic (doping) effects such as surrounding chemicals and environmental oxygen/moisture, which strongly determines their Fermi energy level. Herein, we report the UV treatments on the 2D transition-metal dichalcogenides, to controllably dope the samples without damaging the crystal structures or quenching the luminescence properties. More surprisingly, both n-type and p-type doping can be achieved depending on the initial status of the sample and the UV treatment conditions. The doping mechanisms were elaborated on the atomic scale with transmission electron microscopy and ab initio calculations. The facile doping by UV light has potential to be integrated with photolithography processes, aiming for the large-scale integrated device/circuits design and fabrications.-
dc.languageeng-
dc.relation.ispartofACS Applied Materials and Interfaces-
dc.subjecttransition-metal dichalcogenides-
dc.subjecttwo-dimensional-
dc.subjectatomic defects-
dc.subjectdoping-
dc.subjecttransmission electron microscopy-
dc.subjectatomic force microscopy-
dc.titleFacile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.8b09797-
dc.identifier.pmid30102509-
dc.identifier.scopuseid_2-s2.0-85052314189-
dc.identifier.volume10-
dc.identifier.issue35-
dc.identifier.spage29893-
dc.identifier.epage29901-
dc.identifier.eissn1944-8252-
dc.identifier.isiWOS:000444355700073-
dc.identifier.issnl1944-8244-

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