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Article: Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions

TitleStrain distributions and their influence on electronic structures of WSe<inf>2</inf>-MoS<inf>2</inf> laterally strained heterojunctions
Authors
Issue Date2018
Citation
Nature Nanotechnology, 2018, v. 13, n. 2, p. 152-158 How to Cite?
AbstractMonolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe -MoS , offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe -MoS lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe -MoS lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding. 2 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298243
ISSN
2023 Impact Factor: 38.1
2023 SCImago Journal Rankings: 14.577
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Chendong-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorTersoff, Jerry-
dc.contributor.authorHan, Yimo-
dc.contributor.authorSu, Yushan-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorMuller, David A.-
dc.contributor.authorShih, Chih Kang-
dc.date.accessioned2021-04-08T03:07:59Z-
dc.date.available2021-04-08T03:07:59Z-
dc.date.issued2018-
dc.identifier.citationNature Nanotechnology, 2018, v. 13, n. 2, p. 152-158-
dc.identifier.issn1748-3387-
dc.identifier.urihttp://hdl.handle.net/10722/298243-
dc.description.abstractMonolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe -MoS , offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe -MoS lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe -MoS lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding. 2 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofNature Nanotechnology-
dc.titleStrain distributions and their influence on electronic structures of WSe<inf>2</inf>-MoS<inf>2</inf> laterally strained heterojunctions-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/s41565-017-0022-x-
dc.identifier.pmid29335568-
dc.identifier.scopuseid_2-s2.0-85040689845-
dc.identifier.volume13-
dc.identifier.issue2-
dc.identifier.spage152-
dc.identifier.epage158-
dc.identifier.eissn1748-3395-
dc.identifier.isiWOS:000424293300020-
dc.identifier.issnl1748-3387-

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