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Article: Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

TitleAtomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon
Authors
Keywordslateral junction
atomic layered
2D materials
resonant tunneling phenomenon
heterojunction bipolar transistors
Issue Date2017
Citation
ACS Nano, 2017, v. 11, n. 11, p. 11015-11023 How to Cite?
AbstractHigh-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe -MoS junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298239
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLin, Che Yu-
dc.contributor.authorZhu, Xiaodan-
dc.contributor.authorTsai, Shin Hung-
dc.contributor.authorTsai, Shiao Po-
dc.contributor.authorLei, Sidong-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHuang, Shyh Jer-
dc.contributor.authorWu, Wen Fa-
dc.contributor.authorYeh, Wen Kuan-
dc.contributor.authorSu, Yan Kuin-
dc.contributor.authorWang, Kang L.-
dc.contributor.authorLan, Yann Wen-
dc.date.accessioned2021-04-08T03:07:58Z-
dc.date.available2021-04-08T03:07:58Z-
dc.date.issued2017-
dc.identifier.citationACS Nano, 2017, v. 11, n. 11, p. 11015-11023-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298239-
dc.description.abstractHigh-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe -MoS junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics. 2 2-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectlateral junction-
dc.subjectatomic layered-
dc.subject2D materials-
dc.subjectresonant tunneling phenomenon-
dc.subjectheterojunction bipolar transistors-
dc.titleAtomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.7b05012-
dc.identifier.pmid28976732-
dc.identifier.scopuseid_2-s2.0-85035359032-
dc.identifier.volume11-
dc.identifier.issue11-
dc.identifier.spage11015-
dc.identifier.epage11023-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000416878100044-
dc.identifier.issnl1936-0851-

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