File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: High-efficiency omnidirectional photoresponses based on monolayer lateral p-n heterojunctions

TitleHigh-efficiency omnidirectional photoresponses based on monolayer lateral p-n heterojunctions
Authors
Tsai, Meng LinLi, Ming YangShi, YumengChen, Lih JuannLi, Lain JongHe, Jr Hau
Issue Date2017
Citation
Nanoscale Horizons, 2017, v. 2, n. 1, p. 37-42 How to Cite?
DOI: http://dx.doi.org/10.1039/c6nh00075d
AbstractElectrical and optical properties of lateral monolayer WSe -MoS p-n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices. 2 2 -1
Persistent Identifierhttp://hdl.handle.net/10722/298228
ISSN
2055-6756
2021 Impact Factor: 11.684
2020 SCImago Journal Rankings: 2.992
ISI Accession Number ID
WOS:000391450000003

 

DC FieldValueLanguage
dc.contributor.authorTsai, Meng Lin-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorChen, Lih Juann-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHe, Jr Hau-
dc.date.accessioned2021-04-08T03:07:57Z-
dc.date.available2021-04-08T03:07:57Z-
dc.date.issued2017-
dc.identifier.citationNanoscale Horizons, 2017, v. 2, n. 1, p. 37-42-
dc.identifier.issn2055-6756-
dc.identifier.urihttp://hdl.handle.net/10722/298228-
dc.description.abstractElectrical and optical properties of lateral monolayer WSe -MoS p-n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices. 2 2 -1-
dc.languageeng-
dc.relation.ispartofNanoscale Horizons-
dc.titleHigh-efficiency omnidirectional photoresponses based on monolayer lateral p-n heterojunctions-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/c6nh00075d-
dc.identifier.pmid32260675-
dc.identifier.scopuseid_2-s2.0-85029416709-
dc.identifier.volume2-
dc.identifier.issue1-
dc.identifier.spage37-
dc.identifier.epage42-
dc.identifier.eissn2055-6764-
dc.identifier.isiWOS:000391450000003-
dc.identifier.issnl2055-6756-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats