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Article: Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

TitleSingle Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency
Authors
Keywordslateral heterostructures
transition metal dichalcogenides
2D materials
monolayer
solar cells
Issue Date2017
Citation
Advanced Materials, 2017, v. 29, n. 32, article no. 1701168 How to Cite?
AbstractThe recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe -MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298216
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTsai, Meng Lin-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorRetamal, José Ramón Durán-
dc.contributor.authorLam, Kai Tak-
dc.contributor.authorLin, Yung Chang-
dc.contributor.authorSuenaga, Kazu-
dc.contributor.authorChen, Lih Juann-
dc.contributor.authorLiang, Gengchiau-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHe, Jr Hau-
dc.date.accessioned2021-04-08T03:07:55Z-
dc.date.available2021-04-08T03:07:55Z-
dc.date.issued2017-
dc.identifier.citationAdvanced Materials, 2017, v. 29, n. 32, article no. 1701168-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/298216-
dc.description.abstractThe recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe -MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics. 2 2-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectlateral heterostructures-
dc.subjecttransition metal dichalcogenides-
dc.subject2D materials-
dc.subjectmonolayer-
dc.subjectsolar cells-
dc.titleSingle Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201701168-
dc.identifier.pmid28650580-
dc.identifier.scopuseid_2-s2.0-85021339853-
dc.identifier.volume29-
dc.identifier.issue32-
dc.identifier.spagearticle no. 1701168-
dc.identifier.epagearticle no. 1701168-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000407995100019-
dc.identifier.issnl0935-9648-

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